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In-Situ Infrared (IR) Detection and Heating of the High Pressure Phase of Silicon during Scratching Test

Published online by Cambridge University Press:  01 February 2011

Lei Dong ,
John A. Patten  and
Jimmie A. Miller
Lei Dong
Affiliation:
Center for Precision Engineering, University of North Carolina at Charlotte, Charlotte, NC 28223–0001, U.S.A.
John A. Patten
Affiliation:
Manufacturing Research Center, Western Michigan University, Kalamazoo, MI 49008, U.S.A.
Jimmie A. Miller
Affiliation:
Center for Precision Engineering, University of North Carolina at Charlotte, Charlotte, NC 28223–0001, U.S.A.
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Abstract

A novel method of in-situ detection of the high pressure phase transformation of silicon during dead-load scratching is described. The method is based on the simple fact that single crystal silicon is transparent to Infrared light while metallic materials are not. Infrared heating during scratching has been performed to thermally soften and deform the transformed metallic material and some promising results were obtained. The sample material used here is silicon, but the same approach can be applied to germanium and other materials, such as ceramics (SiC), which have appropriate optical properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 843: Symposium T – Surface Engineering-Fundamentals and Applications , 2004 , T6.5/R10.5
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Cook, R. F. and Pharr, G. M., J. Am. Ceram. Soc., Vol.73, 787 (1990).Google Scholar
2. Needs, R. J. and Mujica, A., Phys. Rev. B51, 9652 (1996).Google Scholar
3. Gridneda, I. V., Milman, Yu. V., Trefilov, V. I., Phys. Stat. Sol. (a) 14, 177 (1972).Google Scholar
4. Clarke, D. R., Kroll, M. C., Kirchner, P. D., Cook, R. F. and Hockey, B. J., Phys. Rev. Lett., 21, 2156 (1988).Google Scholar
5. Pharr, G. M., Oliver, W. C., Cook, R. F., Kirchner, P. D., Kroll, M. C., Dinger, T. R. and Clarke, D. R., J. Mater. Res., Vol. 7, No. 4, 961 (1992).Google Scholar
6. Pharr, G. M., Oliver, W. C. and Clarke, D. R., Scripta Metall., 23, 1949 (1989).Google Scholar
7. Pharr, G. M., Oliver, W. C. and Clarke, D. R., J. Elec. Mater., 19, 881 (1990).Google Scholar
8. Callahan, D. L. and Morris, J. C., J. Mater. Res., Vol. 7, No. 7, 1614 (1992).Google Scholar
9. Kailer, A., Gogotsi, Y. G. and Nickel, K. G., J. Appl. Phys., 81(7), 3057 (1997).Google Scholar
10. Jamieson, J. C., Science, Vol. 139, 762 (1963).Google Scholar
11. Lei, S., Shin, Y. C. and Incropera, F. P., J. Manuf. Sci. Eng., Vol. 123, 639 (2001).Google Scholar
12. Hirata, N., Abbott, D., Patten, J. A., Hocken, R. J., Measurements of the electrical conductivity of Silicon during scratching, http://www.micro.physics.ncsu.edu.Google Scholar
13. Patten, J. A., Dong, L., Miller, J. A., ASPE 2003 Annual Meeting Proceedings, Oct. 26–31, Vol. 30, 507 (2003).Google Scholar
14. Nagumo, M., Suzuki, T. S., Tsuchida, K., Materials Science Forum, 225–227, 581 (1996).Google Scholar