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In-Situ Light-Scattering Measurements During the CVD of Polycrystalline Silicon Carbide

Published online by Cambridge University Press:  15 February 2011

Brian W. Sheldon ,
Philip A. Reichle  and
Theodore M. Besmann
Brian W. Sheldon
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831. Division of Engineering, Brown University, Providence, RI 02912.
Philip A. Reichle
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831.
Theodore M. Besmann
Affiliation:
Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831.
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Abstract

Light-scattering was used to monitor the chemical vapor deposition of silicon carbide from methyltrichlorosilane. The nucleation and growth of the SiC features caused changes in the surface topography that altered the angular scattering spectrum that was generated with a He-Ne laser. These scattering spectra were then analyzed to obtain information about the nucleation and growth processes that are occurring.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 250: Symposium R – Chemical Vapor Deposition of Refractory Metals and Ceramics II , 1991 , 93
Copyright
Copyright © Materials Research Society 1992

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