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In-Situ Monitoring of Surface Hydrogen on the a-SiGe:H Films

Published online by Cambridge University Press:  15 February 2011

Y. Toyoshima ,
G. Ganguly ,
T. Ikeda ,
K. Saitoh ,
M. Kondo  and
A. Matsuda
Y. Toyoshima
Affiliation:
Electrotechnical Laboratory, Thin Film Si Solar Cells Super Lab. Umezono, Tsukuba 305, JAPAN
G. Ganguly
Affiliation:
Electrotechnical Laboratory, Thin Film Si Solar Cells Super Lab. Umezono, Tsukuba 305, JAPAN
T. Ikeda
Affiliation:
Electrotechnical Laboratory, Thin Film Si Solar Cells Super Lab. Umezono, Tsukuba 305, JAPAN
K. Saitoh
Affiliation:
Electrotechnical Laboratory, Thin Film Si Solar Cells Super Lab. Umezono, Tsukuba 305, JAPAN
M. Kondo
Affiliation:
Electrotechnical Laboratory, Thin Film Si Solar Cells Super Lab. Umezono, Tsukuba 305, JAPAN
A. Matsuda
Affiliation:
Electrotechnical Laboratory, Thin Film Si Solar Cells Super Lab. Umezono, Tsukuba 305, JAPAN
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Abstract

The bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated amorphous silicon (a-Si:H) films. This means that the thermal desorption stability of surface Si hydride species is not significantly affected by the coexistence of a small amount (typically 20 at.%) of Ge. On the contrary, the desorption behavior of surface hydrogen depends on the alloy composition when the a-SiGe:H films are Ge-rich. A surface reaction scheme is provided in an attempt to explain this series of behavior in surface hydrogen on the a-SiGe:H films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 567
Copyright
Copyright © Materials Research Society 1997

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References

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