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In-Situ Observation of High Deposition Rate Hydrogenated Polymorphous Silicon Cell Degradation through Variable Intensity Method Measurements

Published online by Cambridge University Press:  31 January 2011

Erik V Johnson ,
Ka-Hyun Kim  and
Pere Roca i Cabarrocas
Erik V Johnson
Affiliation:
erik.johnson@polytechnique.edu, LPICM-CNRS, Palaiseau, France
Ka-Hyun Kim
Affiliation:
ka-hyun.kim@polytechnique.edu, LPICM-CNRS, Palaiseau, France
Pere Roca i Cabarrocas
Affiliation:
pere.roca@polytechnique.edu, LPICM-CNRS, Palaiseau, France
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Abstract

The efficiencies of hydrogenated polymorphous silicon (pm-Si:H) solar cells have been previously demonstrated to show superior stability under light-soaking. This stability arises due to the fact that the decrease they show in fill factor (FF) is partially offset by an accompanying increase in open circuit voltage (VOC). Recently, high-deposition rate (9Å/s) pm-Si:H material deposited by standard RF-PECVD at 13.56MHz has been investigated as the intrinsic layer in photovoltaic modules as it has shown excellent electronic properties. The degradation behaviour of these high-deposition rate cells, however, differs significantly from that of lower deposition rate material. In particular, no beneficial increase in Voc is observed during light soaking. We investigate the degradation dynamics of solar cells made from this high growth rate material using a Variable Illumination Method (VIM) during light soaking to quantify the changes to these high-rate cells during light-soaking and directly contrast them with those of low-rate (1.5Å/s) cells. In particular, we discuss the importance of bulk recombination effects vs interface quality changes, as well as the dynamics of changes in VOC.

Keywords

photovoltaicplasma-enhanced CVD (PECVD) (deposition)Si
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1153: Symposium A – Amorphous and Polycrystalline Thin Film Silicon Science and Technology–2009 , 2009 , 1153-A07-09
Copyright
Copyright © Materials Research Society 2009

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References

1 Soro, Y.M. Abramov, A. Gueunier-Farret, M.E., Johnson, E.V. Longeaud, C. Cabarrocas, P. Rocai and Kleider, J.P. Thin Solid Films 516, 6888(2008).Google Scholar
2 Ferlauto, A. S. Koval, R. J. Wronski, C.R. and Collins, R. W. Appl. Phys. Lett. 80, 2666(2002).Google Scholar
3 Meaudre, M. Meaudre, R. Butté, R., Vignioli, S. Longeaud, C. Kleider, J. P. and Cabarrocas, P. Roca I, J. Appl. Phys. 86, 946(1999).Google Scholar
4 Johnson, E.V. Abramov, A. Soro, Y.M. Gueunier-Farret, M.E., Méot, J., Kleider, J.P. and Cabarrocas, P. Rocai in Thin Film Silicon: Amorphous and Microcrystalline Silicon (23rd European Photovoltaic Solar Energy Conference, Valencia, Spain, 2008) pp. 2339–2342.Google Scholar
5 Cabarrocas, P. Rocai, Djeridane, Y. Tran, Th. Nguyen, Johnson, E.V. Abramov, A. and Zhang, Q. Plasma Phys. Control. Fusion 50, 124037(2008).Google Scholar
6 Cabarrocas, P. Rocai, Chévrier, J.B., Huc, J. Lloret, A. Parey, J.Y. and Schmitt, J.P.M.. J. Vac. Sci. and Technol. A9, 2331(1991).Google Scholar
7 Merten, J. Asensi, J.M. Voz, C. Shah, A.V. Platz, R. and Andreu, J. IEEE Trans. Elec. Devices 45, 423(1998).Google Scholar
8 Yue, G., Yan, B., Ganguly, G. Yang, J. Guha, S. and Teplin, C.W. Appl. Phys. Lett. 88, 263507(2006).Google Scholar