Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-28T17:38:23.212Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Situ Pretreatment Approach for Surface Deterioration Alleviation Amidst Thermal Desorption of GaAs(100)

Published online by Cambridge University Press:  01 February 2011

A.F. Pun ,
X. Wang ,
J.B. Meeks ,
S.M Durbin  and
J.P. Zheng
A.F. Pun
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
X. Wang
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
J.B. Meeks
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
S.M Durbin
Affiliation:
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch, New Zealand
J.P. Zheng
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL, USA
Get access

Abstract

Within this study, a novel in-situ pretreatment is proposed theoretically and demonstrated experimentally, in which the formation of surface pits is subsequently stifled during thermal desorption. The proposed method involves fueling the well reviewed chemical oxide reduction reaction with a segregated source of material other than that ordinarily utilized in pit formation. The proposed method is implementable in virtually all deposition systems subject to the constraints of providing material deposition, substrate heating, and the creation of non-oxidizing environments either via vacuum or inert atmo sphere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 872: Symposium J – Micro- and Nanosystems—Materials and Devices , 2005 , J14.4
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Adamcyk, M., Pinnington, T., Ballestad, A., Tiedje, T., Materials Science and Engineering B75, 153 (2000).Google Scholar
2 Smith, G.W., Pidduck, A.J., Whitehouse, C.R., Glasper, J.L., and Spowart, J., Journal of Crystal Growth 127, 966 (1993).Google Scholar
3 Smith, G.W., Pidduck, A.J., Whitehouse, C.R., Glasper, J.L., Keir, A.M., and Pickering, C., Applied Physics Letters 59(25), 3282 (1991).Google Scholar
4 Guillén-Cervantes, A., Rivera-Alvarez, Z., López-López, M., López-Luna, E., HernándezCalderón, I., Thin Solid Films 373, 159 (2000).Google Scholar
5 Itoh, S., Tomiya, S., Imoto, R., and Ishibashi, A., Applied Surface Science 117, 719 (1997).Google Scholar
6 Mönch, W., Surface Science 168, 577 (1986).Google Scholar
7 Lucovsky, G., Journal of Vacuum Science and Technology 19(3), 456 (1981).Google Scholar
8 Allwood, D.A., Mason, N.J., and Walker, P.J., Materials Science and Engineering B66, 83 (1999).Google Scholar
9 Allwood, D.A., Cox, S., Mason, N.J., Palmer, R., Young, R., and Walker, P.J., Thin Solid Films 412, 76 (2002).Google Scholar
10 , Wada, Applied Physics Letters 52(13), 1056 (1988).Google Scholar
11 Schwartz, G.P., Gualtieri, G.J., Kammlott, G.W., and Schwartz, B., Journal of the Electrochemical Society 126, 1737 (1979).Google Scholar
12 Ingrey, S., Lau, W.M., and McIntyre, N.S., Journal of Vacuum Science and Technology A4(3), 984 (1986).Google Scholar
13 Ishikawa, T. and Ikoma, H., Japanese Journal of Applied Physics 31, 3981 (1992).Google Scholar
14 Anderson, S.G., Komeda, T., Seo, J.M., Capasso, C., Waddill, G.D., Benning, P.J., and Weaver, J.H., Physical Review B42(8), 5082 (1990).Google Scholar
15 Bertness, K.A., Mahowald, P.H., McCants, C.E., Wahi, A.K., Kendelewicz, T., Lindau, I., and Spicer, W.E., Applied Physics A47, 219 (1988).Google Scholar
16 Schwartz, G.P., Thin Solid Films 103, 3 (1983).Google Scholar
17 Landgren, G., Ludeke, R., Morar, J.F., Jugnet, Y., and Himpsel, F.J., Physical Review B30(8), 4839 (1984).Google Scholar
18 Massies, J. and Contour, J.P., Journal of Applied Physics 58(2), 806 (1985).Google Scholar
19 Mizokawa, Y., Iwasaki, H., Nishitani, R., and Nakamura, S., Journal of the Electrochemical Society: Solid-State Science and Technology 126(8), 1370 (1979).Google Scholar
20 Thurmond, C.D., Schwartz, G.P., Kammlott, G.W., and Schwartz, B., Journal of the Electrochemical Society: Solid-State Science and Technology 127(6), 1366 (1980).Google Scholar
21 Lu, Z., Schmidt, M.T., Chen, D., R.M. Osgood Jr., Holber, W.M., Podlesnik, D.V., and Forster, J., Applied Physics Letters 58(11), 1143 (1991).Google Scholar
22 Lide, David R., CRC Handbook of Chemistry and Physics, CRC Press Inc. (1994).Google Scholar
23 Brozel, M.R., Stillman, G.E., Properties of Gallium Arsenide, Institution of Electrical Engineers (1986).Google Scholar
24 Asaoka, Y., Journal of Crystal Growth 251, 40 (2003).Google Scholar
25 Seo, J.M., Anderson, S.G., Komeda, T., Capasso, C., and Weaver, J.H., Physical Review B41(8), 5455 (1990).Google Scholar