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“In-Situ Raman Spectroscopy of Electronic Processes in Fullerene Thin Films

Published online by Cambridge University Press:  01 February 2011

S.B. Phelan
Affiliation:
Facility for Optical Characterization and Spectroscopy / School of Physics, Dublin Institute of Technology, Kevin Street, Dublin 8, Ireland.
B.S. O'Connell
Affiliation:
Facility for Optical Characterization and Spectroscopy / School of Physics, Dublin Institute of Technology, Kevin Street, Dublin 8, Ireland.
G. Farrell
Affiliation:
Facility for Optical Characterization and Spectroscopy / School of Physics, Dublin Institute of Technology, Kevin Street, Dublin 8, Ireland.
G. Chambers
Affiliation:
Facility for Optical Characterization and Spectroscopy / School of Physics, Dublin Institute of Technology, Kevin Street, Dublin 8, Ireland.
H.J. Byrne
Affiliation:
Facility for Optical Characterization and Spectroscopy / School of Physics, Dublin Institute of Technology, Kevin Street, Dublin 8, Ireland.
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Abstract

The current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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