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In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

M. Cerullo ,
Julia M. Phillips ,
M. Anzlowar ,
L. Pfeiffer ,
J. L. Batstone  and
M. Galiano
M. Cerullo
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
Julia M. Phillips
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. Anzlowar
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
L. Pfeiffer
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. L. Batstone
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
M. Galiano
Affiliation:
Materials Science and Mineral Engineering, University of California at Berkeley
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Abstract

A new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 253
Copyright
Copyright © Materials Research Society 1988

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References

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