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In-Situ Rheed Observation of Mocvd-Gan Film Growth

Published online by Cambridge University Press:  21 March 2011

Masatomo Sumiya ,
Noritaka Ogusu ,
Kouhei Osada  and
Shunro Fuke
Masatomo Sumiya
Affiliation:
Department of Electrical &Electronic Engineering., Shizuoka University, 3-5-1 Johoku Hamamatsu, 432-8561, Japan
Noritaka Ogusu
Affiliation:
Department of Electrical &Electronic Engineering., Shizuoka University, 3-5-1 Johoku Hamamatsu, 432-8561, Japan
Kouhei Osada
Affiliation:
Department of Electrical &Electronic Engineering., Shizuoka University, 3-5-1 Johoku Hamamatsu, 432-8561, Japan
Shunro Fuke
Affiliation:
Department of Electrical &Electronic Engineering., Shizuoka University, 3-5-1 Johoku Hamamatsu, 432-8561, Japan
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Abstract

We developed the MOCVD apparatus equipped with RHEED system, which enable us to observe in-situ and real time RHEED for GaN film growth in ~100mTorr of pressure. We attempted to grow GaN film with this MOCVD chamber in 100mTorr. The in-situ RHEED was subsequently observed along the film deposition process in order to understand both the role of buffer layer and the mechanism of GaN film growth by MOCVD on highly lattice-mismatched substrate like sapphire. The results indicate that oxygen removed from the sapphire surface was observed during its cleaning in H2 flow at 1100°C. The dependence of re-crystallization and evaporation of the buffer layer on the annealing ambient was also detected. Although the nitrogen was slightly deficient, HT-GaN film with smooth surface was obtained in 100mTorr by adding H2 gas and reducing total flow rate. In preliminary deposition, the RHEED oscillation-like was observed in MOCVD-GaN growth. Thus, our developing deposition system has a potential to understand the growth mechanism with atomic level.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I9.6.1
Copyright
Copyright © Materials Research Society 2002

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References

[1] Nakamura, S., Science 281, 956 (1998).Google Scholar
[2] Hansen, M., Fini, P., Zhao, L., Abare, A. C., Coldre, L. A., Speck, J. S., and DenBaars, S. P., Appl. Phys. Lett. 76, 529 (2000).Google Scholar
[3] Sumiya, M., Tanaka, M., Ohtsuka, K., Fuke, S., Ohnishi, T., Ohkubo, I., Yoshimoto, M., Koinuma, H., and Kawasaki, M., Appl. Phys. Lett. 75, 674 (1999).Google Scholar
[4] Nakamura, S., Jpn. J. Appl. Phys. 30, 1620 (1991).Google Scholar
[5] Kobayashi, Y., and Kobayashi, N., J. Crys. Growth 189/190, 301 (1998).Google Scholar
[6] Taniyasu, Y., Ito, R., Shimoyama, N., Kurihara, M., Jia, A., Kato, Y., Kobayasi, M., Yoshikawa, A., and Takahashi, K., J. Crys. Growth 189/190, 305 (1998).Google Scholar
[7] Stephenson, G. B., Eastman, J. A., Auciello, O., Munkholm, A., Thompson, C., Fuoss, P. h., Fini, P., DenBaars, S. P., and Speck, J. S., MRS Bulletin 24, 21 (1999).Google Scholar
[8] fijiders, G. J. H., Koster, G., Blank, D. H. A., and, Rogalla, H., Appl. Phys. Lett. 70, 1888 (1997).Google Scholar
[9] Personal communication with Prof. Kawasaki.Google Scholar
[10] Ito, T., Sumiya, M., Takano, Y., Ohtsuka, K., Fuke, S., Jpn. J. Appl. Phys. 38, 649 (1999).Google Scholar