Hostname: page-component-745bb68f8f-v2bm5 Total loading time: 0 Render date: 2025-01-28T10:12:54.318Z Has data issue: false hasContentIssue false
  • English
  • Français

In-situ TEM Studies of Nanoscale Cu Interconnects Under Thermal Stress

Published online by Cambridge University Press:  01 February 2011

Jin Ho An  and
P.J. Ferreira
Jin Ho An
Affiliation:
Materials Science and Engineering Program, University of Texas at Austin, Austin, TX 78712, U.S.A.
P.J. Ferreira
Affiliation:
Materials Science and Engineering Program, University of Texas at Austin, Austin, TX 78712, U.S.A.
Get access

Abstract

Thermal fatigue during processing of microelectronic devices is a general reliability issue of concern in the microelectronic industry. In particular, as devices continue to be downscaled, the relaxation mechanisms operating under thermal stresses are expected to change. In this study, the microstructure of 1.8 micron and 180 nm wide Cu interconnects was identified through Transmission Electron Microscopy (TEM) imaging. In addition, In-situ TEM heating, performed in both type of specimens, is used to observe the differences in dislocation dynamics under thermal stress. In-situ TEM observations show delamination and inhibited dislocation motion in 180nm Cu lines, whereas in 1.8 micron Cu lines, grain boundaries seemed to act as dislocation sources. These different deformation mechanisms are expected to have an impact on the thermal fatigue behavior of Cu interconnects as the scale of devices is brought below 100 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 854: Symposium U – Stability of Thin Films and Nanostructures , 2004 , U11.13
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ohring, M., “Materials Science of Thin Films”, Academic Press (2002) pp732–733 Google Scholar
[2] Vinci, R.P., Zielinski, E.M., Bravman, J.C., Thin Solid Films 262 142–153 (1995)Google Scholar
[3] Thouless, M.D., Gupta, J., Harper, J.M.E., J. Mater Res. 8 1845–1852 (1993)Google Scholar
[4] Keller, R-M., Baker, S.P., Arzt, E., J. Mater Res. 13 1307–1317 (1998)Google Scholar
[5] Park, Hyun, Hwang, Soo-Jung, Joo, Young-Chang, Acta Materialia. 52 2435–2440 (2004)Google Scholar
[6] The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, 2003 Google Scholar
[7] Jawarani, D., Kawasaki, H., Yeo, I.S., Rabenberg, L., Stark, J.P., Ho, P.S., J. Appl Phys. 82, 171–181 (1997)Google Scholar
[8] Ferreira, P. J., Robertson, I.M., Birnbaum, H.K., Acta Materialia, 46, 1749 (1998)Google Scholar
[9] Dehm, G., Arzt, E., Applied Physics Letters 77, 1126–1128 (2000)Google Scholar
[10] Alani, R., Pan, M., J. of Microscopy, 203, 128–133 (2001)Google Scholar
[11] Inkson, B.J., Dehm, G., Wagner, T., Acta Materialia 50, 5033–5047 (2002)Google Scholar