Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-01-29T23:42:04.080Z Has data issue: false hasContentIssue false
  • English
  • Français

Instabilities in the Mechanical Stress in Deposited SiO2 Films Caused by Thermal Treatments

Published online by Cambridge University Press:  25 February 2011

Bharat Bhushan  and
S.P. Murarka
Bharat Bhushan
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY 12180
S.P. Murarka
Affiliation:
Rensselaer Polytechnic Institute, Center for Integrated Electronics, Troy, NY 12180
Get access

Abstract

Using an in-situ stress measurement technique that measures stress as a function of annealing temperature, instabilities in mechanical stress induced by heat treatment in a variety of doped/undoped SiO2 films deposited by APCVD, LPCVD and PECVD techniques have been investigated. A large hysteresis in mechanical stress, caused by first heat treatment to which the as-deposited films are subjected, has been observed in films deposited by APCVD/LPCVD techniques. No such hysteresis is obsesrved in films deposited by PECVD technique. Hysteresis in APCVD/LPCVD films is found to vanish once the films are heat treated at or above 800°C. The results are discussed in terms of oxide densification, the presence of hydrogenous species, and phosphorous.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 181: Symposium B – Advanced Metallizations in Microelectronics , 1990 , 463
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Adams, A.C. in “VLSI Technology” Edited by Sze, S.M., Chapter 6 McGraw-Hill Book Company (1988).Google Scholar
[2] Kern, W., Schnable, G.L. and Fischer, A.W., RCA Rev. 37, 3 (1976).Google Scholar
[3] Adams, A.C., Alexander, F.B., Capio, C.D., and Smith, T.E., J.Electrochem. Soc. 128, 1545 (1981).CrossRefGoogle Scholar
[4] Mattson, Brad, Solid State Technology 60, Jan. (1980).Google Scholar
[5] Smolinsky, G. and Wendling, T.P.H.F., J. Electrochem. Soc. 132, 950 (1985).CrossRefGoogle Scholar
[6] Sunami, H., Itoh, Y. and Sato, K., J. Appl. Phys. 41, 5115 (1970).CrossRefGoogle Scholar
[7] Learn, A.J., J. Electrochem Soc. 132, 405 (1985).CrossRefGoogle Scholar
[8] Lathlaen, R. and Diehl, D.A., J. Electrochem. Soc. 116, 620 (1969).CrossRefGoogle Scholar
[9] Sinha, A.K., Levinstein, H.J. and Smith, T.E., J. Appl. Phys. 49, 2423 (1978).CrossRefGoogle Scholar
[10] Kern, W., RCA Rev. 31, 55 (1976).Google Scholar
[11] Lanford, W.A., Trautvetter, H.P., Ziegler, J. and Keller, J., Appl. Phys. Lett. 28, 566 (1976) .CrossRefGoogle Scholar
[12] Jaccodine, R.J. and Schlegel, W.A., J. Appl. Phys. 37, 2429 (1966).CrossRefGoogle Scholar
[13] Blech, I. and Cohen, U., J. Appl. Phys. 53, 4202 (1982).CrossRefGoogle Scholar
[14] Murarka, S.P. and Retajczk, T.F. Jr. J. Appl. Phys. 54, 2069 (1983).CrossRefGoogle Scholar
[15] “Thermophysical properties of Matter” Edited by Toulokian, U.S., Plenum New York (1977).Google Scholar
[16] Pliskin, W.A., J. Vac. Sci. Technol. 14, 1064 (1977).CrossRefGoogle Scholar
[17] Nassua, K., Levy, R.A. and Chadwick, D.L., J. Electrochem. Soc. 132, 409 (1985).CrossRefGoogle Scholar