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Integration of Low Dielectric Constant Materials in Advanced Aluminum and Copper Interconnects

Published online by Cambridge University Press:  10 February 2011

Bin Zhao  and
Maureen Brongo
Bin Zhao
Affiliation:
Conexant Systems 4311 Jamboree Road, Newport Beach, CA 92660
Maureen Brongo
Affiliation:
Conexant Systems 4311 Jamboree Road, Newport Beach, CA 92660
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Abstract

Advanced on-chip interconnects using new materials and new integration architectures are necessary for current and future IC chips in order to meet the requirements in performance, reliability and manufacturing cost. Insulating materials with low dielectric constant (low-κ) and conductive materials with low-resistivity have drawn significant attention for their possible applications in IC interconnects. Dual damascene interconnect integration architectures not only offer process simplification and low cost, but also enable the use of low-resistive Cu for interconnect wiring. Use of low-κ materials in dual damascene architecture is challenging due to material and processing issues. In this paper, the evolution of advanced interconnects, materials and technology options, and some recent achievements in advanced interconnect systems of low-κ dielectric and dual damascene architectures for both Al and Cu metallization are reviewed and discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 565: Symposium O – Low-Dielectric Constant Materials V , 1999 , 137
Copyright
Copyright © Materials Research Society 1999

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