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Integration of PZT on SOI Wafers: Increasing Piezoelectric Film Thickness for Providing a Wide Range of Ultrasonic MEMS Applications

Published online by Cambridge University Press:  26 February 2011

Brahim Belgacem ,
Florian Calame  and
Paul Muralt
Brahim Belgacem
Affiliation:
brahim.belgacem@epfl.ch, Swiss Federal Institute of Technology in Lausanne, Ceramics Laboratory, STI-IMX-LC, Station 12, Lausanne, 1015, Switzerland
Florian Calame
Affiliation:
florian.calame@epfl.ch, Swiss Federal Institute of Technology in Lausanne, Ceramics Laboratory, STI-IMX-LCStation 12Lausanne1015Switzerland
Paul Muralt
Affiliation:
paul.muralt@epfl.ch, Swiss Federal Institute of Technology in Lausanne, Ceramics Laboratory, STI-IMX-LC, Station 12, Lausanne, 1015, Switzerland
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Abstract

Piezoelectric micromachined ultrasonic transducers comprising a 10 μm thick Si device layer and a 1-4 μm thick piezoelectric PZT layer were investigated. The PZT films were deposited by a sol-gel technique. The transverse piezoelectric coefficient was measured as -14.9 C/m2. The electromechanical coupling increased with PZT thickness, as expected. The influence of both the shape and area of the top electrode on the device performance has been investigated. The electromechanical coupling coefficient (k) and quality factor (Q) have been measured in air and were fitted to an equivalent circuit model. The maximal k2 was obtained as 7.8%.

Keywords

microelectro-mechanical (MEMS)piezoelectricthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 969: Symposium W – Heterogeneous Integration of Materials for Passive Components and Smart Systems , 2006 , 0969-W05-09
Copyright
Copyright © Materials Research Society 2007

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