Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-29T13:29:12.494Z Has data issue: false hasContentIssue false
  • English
  • Français

Intense Ultraviolet Photoluminescence Observed at Room Temperature from NiO Nano-porous Thin Films Grown by the Hydrothermal Technique

Published online by Cambridge University Press:  09 January 2013

Sachindra Nath Sarangi ,
Dongyuan Zhang ,
Pratap Kumar Sahoo ,
Kazuo Uchida ,
Surendra Nath Sahu  and
Shinji Nozaki
Sachindra Nath Sarangi
Affiliation:
On leave from Institute of Physics, Bhubaneswar, 751005, India
Pratap Kumar Sahoo
Affiliation:
National Institute of Science Education and Research (NISER), Institute of Physics Campus, Bhubaneswar-751005, Orissa, India
Surendra Nath Sahu
Affiliation:
The National Institute of Science and Technology, Palur Hills, Berhampur 761008, India
Get access

Abstract

We have successfully formed high-quality nanoporous NiO films by the hydrothermal technique and observed intense ultraviolet (UV) luminescence at room temperature. The SEM image reveals nanoporous NiO films with pore diameters from 70 to 500 nm. The results of XRD, Micro Raman and FTIR characterizations confirm the cubic structure of NiO. The optical band gaps estimated from the absorption spectrum are found to be 3.86 and 4.51 eV. The former is similar to that of bulk NiO, while the latter is much higher than that of bulk NiO. The increased band gap was attributed to the quantum confinement in the NiO nanocrystals, which may be present in the nanoporous NiO film. The room-temperature photoluminescence (PL) spectrum shows a peak of intense luminescence at 3.70 eV and several other peaks in the UV and near-UVwavelength regions. The intense UV luminescence at 3.70 eV was associated with the near band-edge emission and the others with defect-related emission. The high-quality wall of nanoporous NiO with a large surface-to-volume ratio provided the intense UV emission.

Keywords

hydrothermalluminescencenanoscale
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 203 - 208
Copyright
Copyright © Materials Research Society 2012 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Thongbai, P., Yamwong, T. and Maensiri, S., Appl. Phys. Lett. 94, 152905(2009).CrossRefGoogle Scholar
Tiwari, S. D. and Rajeev, K. P., Thin Solid Films, 505, 113 (2006).CrossRefGoogle Scholar
He, J. H., Yuan, S. L., Yin, Y. S., Tian, Z. M., Li, P., Wang, Y. Q., Liu, K. L. and Wang, C. H., J. Appl. Phys. 103, 02390 (2008).Google Scholar
Kashani Motlagh, M. M., Youzbashi, A. A. and Sabaghzadeh, L., Int. J. Phys. Sci. 6(6), 1471 (2011).Google Scholar
Meher, S. K., Justin, P. and Rao, G. R., Nanoscale 3, 683 (2011).CrossRefGoogle ScholarPubMed
Ahmed, M.A., J. Photochemistry and Photobiology A: Chemistry 238, 63 (2012).CrossRefGoogle Scholar
Xing, S., Wang, Q., Ma, Z., Wu, Y. and Gao, Y., Materials Research Bulletin 47, 2120 (2012).CrossRefGoogle Scholar
Du, Y., Wang, W., Li, X., Zhao, J., Ma, J., Liu, Y., Lu, G. and Du, Y., Materials Letters 68, 168 (2012).CrossRefGoogle Scholar
Zhang, Z., Zhao, Y., and Zhu, M., Appl. Phys. Lett. 88, 033101 (2006).CrossRefGoogle Scholar
Lu, M., Lin, T. Y., Weng, T., and Chen, Y., OPTICS EXPRESS 19, 16266 (2011).CrossRefGoogle Scholar
Lin, Y., Xie, T., Cheng, B., Geng, B., Zhang, L., Chem. Phys. Lett. 380, 521(2003).CrossRefGoogle Scholar
Das, Soumen, Ghoshal, Tandra and Nambissan, M. G., Phys. Status Solidi C 6, 2569 (2009).CrossRefGoogle Scholar
Fauchet, P. M., Semiconductor and Semimetals, Chapter 6, edited by Lockwood, D. J., 49 (Academic Press, 206 (1998).Google Scholar
Wu, Z. Y., Liu, C. M., Guo, L., Hu, R., Abbas, M. I., Hu, T. D., and Xu, H. B., J. Phys. Chem. B 109, 2512 (2005).CrossRefGoogle Scholar