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Interdiffusion and Carrier Recombination in High Intensity Transient Gratings

Published online by Cambridge University Press:  10 February 2011

R. Schwarz ,
S. Grebner ,
C. E. Nebel ,
M. Lanz  and
M. Stutzmann
R. Schwarz
Affiliation:
Technical University of Munich, Physics Department E16, D-85747 Garching, Germany
S. Grebner
Affiliation:
Technical University of Munich, Physics Department E16, D-85747 Garching, Germany
C. E. Nebel
Affiliation:
Technical University of Munich, Walter-Schottky-Institute, D-85747 Garching, Germany
M. Lanz
Affiliation:
Technical University of Munich, Walter-Schottky-Institute, D-85747 Garching, Germany
M. Stutzmann
Affiliation:
Technical University of Munich, Walter-Schottky-Institute, D-85747 Garching, Germany
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Abstract

Transient grating (TG) experiments were performed to study carrier diffusion and recombination in amorphous silicon films (a-Si:H) at high light intensities using 8 ns pulses from a frequency-doubled Nd:YAG laser. The ambipolar diffusion coefficients reached about 10−2cm2/s, which is 2 orders of magnitude larger than the steady-state value. Similar results were obtained in intrinsic, p-, and n-doped a-Si:H films, indicating that the diffusion coefficients in all cases reflect the near band edge mobility of the slower carriers, that is holes. In particular, the p-type sample shows an initially fast, then a slow grating efficiency decay, consistent with dispersive transport.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 723
Copyright
Copyright © Materials Research Society 1996

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