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Interface Defects in GIGS-based Solar Cells from Coupled Electrical and Chemical Points of View

Published online by Cambridge University Press:  21 March 2011

B. Canava
Affiliation:
Institut Lavoisier (IREM, UMR 8637 CNRS)Université de Versailles-Saint Quentin, 45 ave des Etats Unis, 78035 Versailles Cedex, France
J. Vigneron
Affiliation:
Institut Lavoisier (IREM, UMR 8637 CNRS)Université de Versailles-Saint Quentin, 45 ave des Etats Unis, 78035 Versailles Cedex, France
A. Etcheberry
Affiliation:
Institut Lavoisier (IREM, UMR 8637 CNRS)Université de Versailles-Saint Quentin, 45 ave des Etats Unis, 78035 Versailles Cedex, France
S. Ould Saad
Affiliation:
Laboratoire de Génie Electrique de Paris (LGEP, UMR 8507 CNRS) LGEP-Supélec, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France
Z. Djebbour
Affiliation:
Laboratoire de Génie Electrique de Paris (LGEP, UMR 8507 CNRS) LGEP-Supélec, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France
D. Mencaraglia
Affiliation:
Laboratoire de Génie Electrique de Paris (LGEP, UMR 8507 CNRS) LGEP-Supélec, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France
J.F. Guillemoles
Affiliation:
Laboratoire d'Électrochimie (LECA, UMR 7575 CNRS) Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
D. Lincot
Affiliation:
Laboratoire d'Électrochimie (LECA, UMR 7575 CNRS) Ecole Nationale Supérieure de Chimie de Paris, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
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Abstract

Chemistry of co-evaporated CIGS surfaces submitted to chemical treatments relevant to fabrication steps were investigated by XPS and admittance spectroscopy. A Se XPS signal specific of the CIGS surfaces was identified. Surface states seen by Admittance and surface chemistry are seen to change significantly during the elaboration steps. Consequences for device elaboration are briefly discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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References

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