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Interface Effects on Photocarrier Transport in a-Si:H

Published online by Cambridge University Press:  21 February 2011

P. D. Persans ,
D. Arnzen ,
G. Possin ,
L. D'Anna ,
X. S. Zhao  and
K. Breton
P. D. Persans
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
D. Arnzen
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
G. Possin
Affiliation:
General Electric Corporate Research and Development Laboratories, Schenectady, NY
L. D'Anna
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
X. S. Zhao
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
K. Breton
Affiliation:
Physics Department and Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

We discuss the absorption-length and film thickness dependence of photoconductivity in amorphous silicon using measurements of the ambipolar diffusion length and the Debye screening length.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 219: Symposium A – Amorphous Silicon Technology - 1991 , 1991 , 837
Copyright
Copyright © Materials Research Society 1991

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References

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