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Interface Study of Mo/GaAs

Published online by Cambridge University Press:  22 February 2011

Peiching Ling
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C
Jyh-Kao Chang
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C
Min-Shyong Lin
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C
Jen-Chung Lou
Affiliation:
Department of Electrical Engineering, National Tsing Hua University, Hsinchu, Taiwan 300, R.O.C
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Abstract

The electrical characteristics and the microstructure of Mo/GaAs Schottky diodes fabricated by electron-beam evaporation have been studied. The barrier height, ideality factor, deep trapping levels and intermetallic compounds of these annealed or unannealed Mo/GaAs Schottky diodes are obtained by using the I-V, C-V, Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), deep level transient spectroscopy (DLTS) and transmission electron microscopy (TEM) analyses. An obvious interdiffusion at Mo/GaAs interface is observed in Mo/GaAs Schottky diodes annealed above 500°C for 10 min. DLTS results show that there are two electron traps [Ec-(0.52±0.02)'eV and Ec-(0.86±0.02) eV] and one hole trap [Ev+(0.92±0.02) eV] are demonstrated for 300°C, 400°C post-annealed Mo/GaAs diodes. TEM results also indicate that the disappearance of these deep trapping levels may correlated to the formation of intermetallic compounds GaMo3 and MoAs2 existed in Mo/GaAs diodes post-annealed above 500°C. It is believed that the metal-semiconductor interdiffusion and the intermetallic compounds play the major roles for the thermal degradation of Mo/GaAs Schottky diodes.

Type
Research Article
Copyright
Copyright © Materials Research Society 1985

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References

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