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Interfacial Pressure Measurements at Chemical Mechanical Polishing Interfaces

Published online by Cambridge University Press:  10 February 2011

Lei Shan ,
Steven Danyluk  and
Joseph Levert
Lei Shan
Affiliation:
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0405
Steven Danyluk
Affiliation:
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332–0405
Joseph Levert
Affiliation:
Current address is: Advanced Microelectronic Materials, AlliedSignal Inc., 1349 Moffett Park Dr.,Sunnyvale, CA 94089
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Abstract

We have found that the entrainment of a slurry between a silicon surface and a polyurethane pad will cause the generation of subambient pressure at that interface. These pressures cause the silicon to be further impressed into the pad. We have measured these pressures and this paper reports on the pressure distribution maps over an area beneath a 100mm diameter silicon wafer. The pressures are generally not uniform. The leading 2/3 of the wafer has subambient pressures of the order of 50kPa and the trailing 1/3 of the wafer has positive pressures of approximately 10kPa. The reasons for the subambient pressures is related to the dynamics of the compression of pad asperities, the boundary effects of the silicon edge, the rebound of the asperities, and re-infiltration of the slurry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 566: Symposium P – Chemical-Mechanical Poilshing-Fundamentals and Challenges , 1999 , 187
Copyright
Copyright © Materials Research Society 2000

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References

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