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Interfacial Properties, Surface Morphology and Thermal Stability of Epitaxial GaAs on Ge Substrates with High-k Dielectric for Advanced CMOS Applications

Published online by Cambridge University Press:  01 February 2011

A Kumar ,
G K Dalapati ,
Terence Kin Shun Wong ,
M K Kumar ,
C K Chia ,
H Gao ,
B Z Wang ,
A S Wong  and
D Z Chi
A Kumar
Affiliation:
avishek.eee@gmail.com, Nanyang Technological University, School of EEE, Singapore, Singapore
G K Dalapati
Affiliation:
dalapatig@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
Terence Kin Shun Wong
Affiliation:
ekswong@ntu.edu.sgterencekswong@gmail.com, Nanyang Technological University, Singapore, Singapore
M K Kumar
Affiliation:
kumarm@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
C K Chia
Affiliation:
chiac@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
H Gao
Affiliation:
gaoh@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
B Z Wang
Affiliation:
wangb@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
A S Wong
Affiliation:
wonga@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
D Z Chi
Affiliation:
chid@imre.a-star.edu.sg, IMRE A*STAR, Singapore, Singapore
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Abstract

Epitaxial GaAs layers had been grown by metal organic chemical vapor deposition at 620°C on Ge(100) susbtrates. The surface roughness of the GaAs is greater than that of GaAs bulk wafers and epilayer morphology is influenced by miscut of the Ge substrate. The GaAs/Ge interface is of good quality and devoid of misfit dislocations and antisite defects. However, Ge diffusion into GaAs occurred during epitaxy and resulted in auto-doping. ZrO2 was deposited by magnetron sputtering onto the epi-GaAs. Capacitance voltage measurements show that the TaN/ZrO2/epi-GaAs capacitor has an interfacical with more defects than a ZrO2/bulk GaAs interface. An improved interface with smaller frequency dispersion can be formed by atomic layer deposition of the high-k dielectric layer onto the epi-GaAs.

Keywords

physical vapor deposition (PVD)epitaxyIII-V
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1252: Symposia I/J – Materials and Devices for End-of-Roadmap and Beyond CMO's Scaling , 2010 , 1252-I07-05
Copyright
Copyright © Materials Research Society 2010

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