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Interfacial Reactions Between Ni and GaAs

Published online by Cambridge University Press:  26 February 2011

J. C. Lin ,
X. -Y. Zheng ,
K. -C. Hsieh  and
Y. A. Chang
J. C. Lin
Affiliation:
University of Wisconsin-Madison, Department of Metallurgical and Mineral Engineering, 1509 University Avenue, Madison, WI 53706
X. -Y. Zheng
Affiliation:
University of Wisconsin-Madison, Department of Metallurgical and Mineral Engineering, 1509 University Avenue, Madison, WI 53706
K. -C. Hsieh
Affiliation:
University of Wisconsin-Madison, Department of Metallurgical and Mineral Engineering, 1509 University Avenue, Madison, WI 53706
Y. A. Chang
Affiliation:
University of Wisconsin-Madison, Department of Metallurgical and Mineral Engineering, 1509 University Avenue, Madison, WI 53706
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Abstract

Interfacial reactions between Ni and GaAs have been studied using bulk diffusion couples of Ni(∼0.5mm thick)/GaAs and thin-film Ni (∼40nm) on GaAs (100) in addition to phase diagram determination at 600° C. On the basis of the phase diagram and the bulk diffusion couples, the ternary phase which forms first in the thin-film couples is Ni3 GaAs. Thinfilm studies show that the epitaxial growth of equilibrium contact phases, i.e., NiAs and β-GaNi, on a GaAs (100) substrate is possible.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 233
Copyright
Copyright © Materials Research Society 1988

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Footnotes

*

This work was sponsored by the U.S. Department of Energy under contract No. DE-FG02–86ER452754.

References

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