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Internal Stress and Optical Degradation in a-Si:H Deposited on Glass Substrates

Published online by Cambridge University Press:  10 February 2011

Jun-ichi Nakata ,
Tadayuki Miyako ,
Shozo Imao  and
Atsutoshi Doi
Jun-ichi Nakata
Affiliation:
Department of Electrical Engineering, Kinki University, Higashiosaka, Osaka 577-8502, JAPAN
Tadayuki Miyako
Affiliation:
Department of Electrical Engineering, Kinki University, Higashiosaka, Osaka 577-8502, JAPAN
Shozo Imao
Affiliation:
Department of Electrical Engineering, Kinki University, Higashiosaka, Osaka 577-8502, JAPAN
Atsutoshi Doi
Affiliation:
Department of Electrical Engineering, Kinki University, Higashiosaka, Osaka 577-8502, JAPAN
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Abstract

Internal stress in a-Si:H films prepared by plasma chemical vapor deposition was studied in connection with optical degradation or Staebler-Wronski effect (SWE). It was found that the stress increased with increasing discharge power density (0.03 ∼ 1.5 W/cm2) of silane, accompanied by increase in the introduction rate of SWE. These results imply that highly decomposed radical species due to high discharge power density dominate the surface reaction. Consequently, larger stress and larger introduction rate of SWE are brought about in the films. The stress also slightly increased at lower power density (< 0.03 W/cm2), suggesting that neutral silane molecules take part in the reaction at these power density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 487
Copyright
Copyright © Materials Research Society 1998

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References

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