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Investigation of effects of ion beam irradiation on properties of magnesium oxide films

Published online by Cambridge University Press:  26 February 2011

Yasuhiko Morimoto ,
Yoshikazu Tanaka  and
Ari Ide-Ektessabi
Yasuhiko Morimoto
Affiliation:
hiko@sd6.so-net.ne.jp, Kyoto University, Precision Engineering, Yoshidahonmachi, Sakyo-ku, Kyoto, N/A, 606-8501, Japan, +81-75-753-5259, +81-75-753-5259
Yoshikazu Tanaka
Affiliation:
yoshikazu_tanaka@sanwakenma.co.jp, Kyoto University, Mechanical Engineering and Science, Japan
Ari Ide-Ektessabi
Affiliation:
h51167@sakura.kudpc.kyoto-u.ac.jp, Kyoto University, International Innovation Center, Japan
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Abstract

Magnesium oxide (MgO) film is commonly used as protecting layer for alternative current plasma display panels (AC-PDPs). Low energy ion induced secondary electron emission coefficient (γ) is one of the important factors to improve performance of AC-PDPs. The aim of this study is to prepare MgO films with high γ using ion beam assisted deposition (IBAD). The film composition, density, and crystal orientation were also investigated. The results suggest that MgO films with high γ can be obtained using IBAD. On the other hand, as the assisted ion beam energy increased to more than 500eV during deposition, (200)-oriented film with low γ grew preferentially and then the γ decreased.

Keywords

ion-beam assisted depositionion beam analysisfilm
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 908: Symposium OO – Growth, Modification, and Analysis by Ion Beams at the Nanoscale , 2005 , 0908-OO14-03
Copyright
Copyright © Materials Research Society 2006

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