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Investigation of Impurity Neutralization and Defect Passivation in Polycrystalline Silicon Solar Cells

Published online by Cambridge University Press:  22 February 2011

Lawrence L. Kazmerski
Lawrence L. Kazmerski*
Affiliation:
Solar Energy Research Institute, 1617 Cole Boulevard, Golden, CO 80401
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Abstract

The passivation of grain boundaries and the neutralization of impurities in polycrystalline silicon, important processes for the improvement of performance of devices fabricated from this material, are discussed. The incorporation of hydrogen into grain boundaries is investigated using surface analysis methods. Volume-mapping techniques are used to identify the bonding mechanisms of the hydrogen in oxygen-free and oxygen-rich intergrain regions. Interactions between shallow acceptors (B, Al, Ga and In) and hydrogen in polycrystalline Si are studied. The bonding mechanisms involved in the acceptor neutralization process at the grain boundaries are evaluated using microanalytical techniques. Differences in the incorporation of molecular and atomic hydrogen, and corresponding variation in electrical passivation of grain boundaries, are observed. Volume-indexed AES and Auger difference spectroscopy data are complemented by scanning tunneling microscope images to confirm the direct hydrogen-silicon bonding in boron-doped grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 106: Symposium G – Polysilicon Films and Interfaces , 1987 , 199
Copyright
Copyright © Materials Research Society 1988

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