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Published online by Cambridge University Press: 15 February 2011
With the perturbed angular correlation and distribution methods we studied the trapping and annealing of lattice defects in the hcp metals Cd and Zn. The defects were produced (i) by proton irradiation, (ii) by quenching, and (iii) by heavy ions recoiling after a nuclear reaction As probe ions we used 111Cd (i,ii) and 67Ge,69 Ge,71 Ge,113 Sn, and116 Sn (iii). The In-impurities in Zn and Cd are trapping centers for vacancies. At low temperatures (100 to 200 K) simple defect configurations are observed. In the in–beam experiments a sharp annealing step due to detrapping of vacancy type defects is found.