Hostname: page-component-cd9895bd7-p9bg8 Total loading time: 0 Render date: 2024-12-29T08:37:34.001Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of Low Angle Grain Boundaries in Hexagonal Silicon Carbide

Published online by Cambridge University Press:  01 February 2011

Yi Chen ,
Hui Chen ,
Ning Zhang ,
Michael Dudley  and
Ronghui Ma
Yi Chen
Affiliation:
yichen1@ic.sunysb.edu, Stony Brook University, Materials Science and Engineering, 314 Old Engineering, Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY, 11794-2275, United States, 6316328501, 6316328052
Hui Chen
Affiliation:
huichen@ic.sunysb.edu, Stony Brook University, Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Ning Zhang
Affiliation:
ningzhang@ic.sunysb.edu, Stony Brook University, Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Michael Dudley
Affiliation:
mdudley@notes.cc.sunysb.edu, Stony Brook University, Materials Science and Engineering, Stony Brook, NY, 11794-2275, United States
Ronghui Ma
Affiliation:
roma@umbc.edu, University of Maryland Baltimore County, Mechanical Engineering, Baltimore, MD, 21250, United States
Get access

Abstract

Interaction between basal plane dislocations and single or well-spaced threading dislocations is discussed based on synchrotron white beam X-ray topographic studies carried out on physical vapor transport grown hexagonal silicon carbide single crystals. The basal plane dislocations are able to cut through single or well-spaced threading edge dislocations even if the formation of kinks/jogs is energetically unfavorable while threading screw dislocations were mostly observed to act as effective pinning points. However, basal plane dislocations can sometimes cut through a threading screw dislocation, forming a superjog and which subsequently migrates on the prismatic plane via a cross-slip process. Threading edge dislocation walls act as obstacles for the glide of basal plane dislocations and the mechanism by which this occurs is discussed. The character of low angle grain boundaries and their dislocation content are discussed.

Keywords

grain boundariesdislocationsdefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I07-50
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Xie, M. H. et al., Appl. Phys. Lett. 77, 1105 (2000)Google Scholar
2 Huang, X. R., Bai, J., Dudley, M., Wagner, B., Davis, R. F. and Zhu, Y., Phys. Rev. Lett. 95, 086101 (2005)Google Scholar
3 Poust, B., Heying, B., Hayashi, S., Ho, R., Matney, K., Sandhu, R., Wojtowicz, M. and Goorsky, M., J. Phys. D: Appl. Phys. 36, A102 (2003)Google Scholar
4 Ma, R. -H., Zhang, H., Ha, S. and Skowronski, M., J. Cryst. Growth 252, 523 (2003)Google Scholar
5 Frank, F. C., Acta. Cryst. 4, 497 (1951)Google Scholar
6 Zhang, M., Hobgood, H. M. and Pirouz, P.: Mater. Sci. Forum Vol.457–460 (2004) p. 371 Google Scholar
7 Chen, Y., Dudley, M., Liu, K. X. and Stahlbush, R. E. (submitted)Google Scholar
8 Chen, Y., Dhanaraj, G. and Dudley, M. et al., in Silicon Carbide 2006 – Materials, Processing and Devices, edited by Dudley, M., Capano, M.A., Kimoto, T., Powell, A.R., Wang, S. (Mater. Res. Soc. Symp. Proc. 911, Warrendale, PA, 2006), 0911–B09Google Scholar
9 Chen, Y., Dhanaraj, G., Vetter, W., Dudley, M. and Ma, R., Mater. Sci. Forum (accepted)Google Scholar