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Investigation of Platinum Silicide Schottky Barrier Height Modulation using a Dopant Segregation Approach

Published online by Cambridge University Press:  01 February 2011

Nicolas Breil ,
Aomar Halimaoui ,
Emmanuel Dubois ,
Evelyne Lampin ,
Guilhem Larrieu ,
Ludovic Godet ,
George Papasouliotis  and
Thomas Skotnicki
Nicolas Breil
Affiliation:
nicolas.breil@isen.iemn.univ-lille1.fr, STMicroelectronics, Advanced Devices, 850, rue Jean Monnet, Crolles, 38920, France
Aomar Halimaoui
Affiliation:
aomar.halimaoui@st.com, STMicroelectronics, 850, rue Jean Monnet, Crolles, 38920, France
Emmanuel Dubois
Affiliation:
emmanuel.dubois@isen.iemn.univ-lille1.fr, UMR CNRS 8520, IEMN-ISEN, Cité Scientifique, Avenue Poincaré, Villeneuve d'Ascq, 59652, France
Evelyne Lampin
Affiliation:
evelyne.lampin@isen.iemn.univ-lille1.fr, UMR CNRS 8520, IEMN-ISEN, Cité Scientifique, Avenue Poincaré, Villeneuve d'Ascq, 59652, France
Guilhem Larrieu
Affiliation:
guilhem.larrieu@isen.iemn.univ-lille1.fr, UMR CNRS 8520, IEMN-ISEN, Cité Scientifique, Avenue Poincaré, Villeneuve d'Ascq, 59652, France
Ludovic Godet
Affiliation:
ludovic.godet@vsea.com, Varian Semiconductor Equipment Associates, Inc., 35, Dory Rd., Gloucester, MA, 01930, United States
George Papasouliotis
Affiliation:
george.papasouliotis@vsea.com, Varian Semiconductor Equipment Associates, Inc., 35, Dory Rd., Gloucester, MA, 01930, United States
Thomas Skotnicki
Affiliation:
thomas.skotnicki@st.com, STMicroelectronics, 850, rue Jean Monnet, Crolles, 38920, France
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Abstract

The role of the dopant activation on the segregation efficiency during the formation of platinum silicide (PtSi) is investigated in this paper. Using an implant before silicidation technique, we first demonstrate an important Schottky Barrier Height (SBH) modulation for As and B segregation. In the case of As, we highlight that an activation of the dopants before the silcidation does not impact the SBH modulation. On the contrary, an important impact of the dopant crystalline position is evidenced for Boron. Also, a comparison of conventional implant versus a PLAsma Doping (PLAD) highlights the suitability of the latter implantation tool for the SBH modulation. Those results are interpreted on the basis of SIMS depth profiling.

Keywords

PtSidopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008 , 1070-E02-10
Copyright
Copyright © Materials Research Society 2008

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References

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