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Investigation of Roughness at InP/InAs Interfaces

Published online by Cambridge University Press:  25 February 2011

M.J.S.P. Brasil ,
R. E. Nahory ,
M. C. Tamargo  and
S. Schwarz
M.J.S.P. Brasil
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701.
R. E. Nahory
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701.
M. C. Tamargo
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701.
S. Schwarz
Affiliation:
Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701.
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Abstract

We have investigated the interface roughness of single thin InP/InAs quantum wells grown by Chemical Beam Epitaxy. We report results of low temperature photoluminescence and secondary ion mass spectroscopy. The interface roughness is characterized by multiple-line photoluminescence spectra and is very sensitive to parameters such as the growth temperature. Details of the interface roughness are discussed based on the shifts of the excitonic energies observed by photoluminescence.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 255
Copyright
Copyright © Materials Research Society 1993

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References

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