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Investigation of Texture and Stress in Undoped Polysilicon Films

Published online by Cambridge University Press:  21 February 2011

J. Huang ,
P. Krulevitch ,
G.C. Johnson ,
R.T. Howe  and
H.R. Wenk
J. Huang
Affiliation:
Berkeley Sensor & Actuator Center, Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720
P. Krulevitch
Affiliation:
Berkeley Sensor & Actuator Center, Department of Mechanical Engineering, University of California, Berkeley, CA 94720
G.C. Johnson
Affiliation:
Berkeley Sensor & Actuator Center, Department of Mechanical Engineering, University of California, Berkeley, CA 94720
R.T. Howe
Affiliation:
Berkeley Sensor & Actuator Center, Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA 94720
H.R. Wenk
Affiliation:
Department of Geology and Geophysics, University of California, Berkeley, CA 94720
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Abstract

Undoped LPCVD polysilicon films deposited on thermal oxide and prepared under various process conditions have been investigated for their texture and stress characteristics. Pole figures measured by X-ray diffraction in reflection geometry were used to determine the orientation. distribution function which provides a quantitative description of the texture. Stresses were determined using wafer curvature measurements. Both texture and stress show substantial variation with deposition condition. Textures typically exhibit axial symmetry and appear to be correlated with the sign and magnitude of the stress. Under certain deposition conditions, the stress varies considerably along the tube, with the stress in the wafers at the upstream end being tensile and at the downstream end being compressive.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 201
Copyright
Copyright © Materials Research Society 1990

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