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Investigation of the Promotion Effect of Germane in Low Temperature Uhv-Cvd Silicon

Published online by Cambridge University Press:  26 February 2011

Kevin J. Uram  and
Bernard S. Meyerson
Kevin J. Uram
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
Bernard S. Meyerson
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

High quality, low defect density, single crystalline silicon/germanium alloys have been grown on Si(100) substrate wafers in a low temperature UHV-CVD reactor. Using a silane/germane gaseous source, the growth rate of the epitaxial layer increases from 4 angstroms/minute with no germane present to 82 angstroms/minute with 12.7% germane present in the reaction gas mixture at 550C. The germanium/silicon ratio in the deposited alloy is a factor of two greater than the germane/silane ratio in the reaction gas mixture. The kinetics of this effect are studied and correlation to UHV hydrogen thermal desorption from single crystal silicon-germanium alloys are made.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 307
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1.Meyerson, B.S., Appl. Phys. Letters 48, 797 (1986).Google Scholar
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3.Uram, K.J., Gates, S.M., and Meyerson, B.S., work in progress.Google Scholar