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Investigation of titanium nitride films prepared by ion-beam-assisted deposition at high Ar+/Ti ratio

Published online by Cambridge University Press:  25 February 2011

J. H. Hsieh ,
D. E. Bush ,
R. A. Erck ,
G. R. Fenske  and
F. A. Nichols
J. H. Hsieh
Affiliation:
Materials and Components Technology Division, Argonne National Laboratory, Argonne, IL 60439
D. E. Bush
Affiliation:
Materials and Components Technology Division, Argonne National Laboratory, Argonne, IL 60439
R. A. Erck
Affiliation:
Materials and Components Technology Division, Argonne National Laboratory, Argonne, IL 60439
G. R. Fenske
Affiliation:
Materials and Components Technology Division, Argonne National Laboratory, Argonne, IL 60439
F. A. Nichols
Affiliation:
Materials and Components Technology Division, Argonne National Laboratory, Argonne, IL 60439
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Abstract

Titanium nitride films were prepared by reactive ion beam assisted deposition (RIBAD) with Ar+/Ti ratios ranging from 1.0 to 2.3. The compositions, phases and textures of these films were studied by AES and XRD as a function of Ar+/Ti ratio and nitrogen partial pressure. The results indicate that the IBAD titanium nitride films deposited at high Ar+/Ti ratio and low nitrogen partial pressure may have reduced nitrogen concentration, (200) preferred orientation, and possibly contain the Ti2N phase.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 191
Copyright
Copyright © Materials Research Society 1992

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References

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