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Ion Beam Annealing of Si Co-Implanted with Ga and As

Published online by Cambridge University Press:  25 February 2011

S. P. Withrow ,
O. W. Holland ,
S. J. Pennycook ,
J. Pankove  and
A. Mascarenhas
S. P. Withrow
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
O. W. Holland
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
S. J. Pennycook
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN 37831
J. Pankove
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
A. Mascarenhas
Affiliation:
Solar Energy Research Institute, Golden, CO 80401
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Abstract

Ion beam annealing of amorphous Si(100) layers formed by co-implantation of overlapping Ga and As distributions is studied. Annealing was done using 750 keV Si+ ions with the Si substrate held at 300°C. The samples were characterized using 2.0 and 5.0 MeV He+ backscattering/channeling as well as by transmission electron microscopy (TEM). Crystallization of the amorphous Si layer occurs during irradiation via solid-phase-epitaxial growth without impurity precipitation or segregation. Both the Ga and As are mainly substitutional in the Si lattice, even at concentrations in excess of 7 at. % for each species. These results are attributed to compensation effects, most likely through ion pairing of the dopants.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 143
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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