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Ion Beam Etching System for Mercury Cadmium Telluride and III-V Compound Semiconductors

Published online by Cambridge University Press:  25 February 2011

Geoffrey K. Reeves ,
Patrick. W. Leech  and
Patrick Bond
Geoffrey K. Reeves
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Vic., Australia
Patrick. W. Leech
Affiliation:
Telecom Australia Research Labs., Clayton, Vic., Australia
Patrick Bond
Affiliation:
Royal Melbourne Institute of Technology, Melbourne, Vic., Australia
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Abstract

This paper describes a laboratory built ion beam etching system and its performance when used for etching Hg1-xCdxTe, GaAs and InP. The etching system provides a means for forming device mesas on a wide range of semiconductors without having to resort to wet chemical etches. The system uses a Kaufmann ion source, a rotating platform and two flow controllers to allow the variation of gas ratios and flows.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 253
Copyright
Copyright © Materials Research Society 1992

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References

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