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Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena

Published online by Cambridge University Press:  03 September 2012

F. Priolo ,
V. Privitera ,
S. Coffa  and
S. Libertino
F. Priolo
Affiliation:
INFM and Dipartimento di Fisica dell'Università, Corso Italia 57, 95129 Catania (Italy)
V. Privitera
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95100 Catania (Italy)
S. Coffa
Affiliation:
CNR-IMETEM, Stradale Primosole 50, 95100 Catania (Italy)
S. Libertino
Affiliation:
INFM and Dipartimento di Fisica dell'Università, Corso Italia 57, 95129 Catania (Italy)
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Abstract

Our recent work on the room temperature migration and trapping phenomena of ion beam generated point defects in crystalline Si is reviewed. It is shown that a small fraction (∼ 10−6) of the defects generated at the surface by a shallow implant is injected into the bulk. These defects undergo a long range trap-limited diffusion and interact with both impurities, dopants and preexisting defects along their path. In particular, these interactions result in dopant deactivation and/or partial annihilation of pre-existing vacancy-type defect markers. It is found that in highly pure, epitaxial Si layers, these effects extend to several microns from the surface, demonstrating a long range migration of point defects at room temperature. By a detailed analysis of the experimental evidences we have identified the Si self-interstitials as the major responsible for the observed phenomena. This allowed us to give a lower limit of 6×10−11-cm2/s for the room temperature diffusion coefficient of the Si self-interstitials. Room temperature trap-limited migration of vacancies is also detected as a broadening in the divacancy profile of as implanted samples. In this case the room temperature diffusion coefficient of vacancies has been found to be ≥3 × 10−12 cm 2/s. These data are presented and their implications discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 53
Copyright
Copyright © Materials Research Society 1997

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