Hostname: page-component-6bf8c574d5-rwnhh Total loading time: 0 Render date: 2025-02-22T20:29:19.559Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Beam Synthesis of Buried CoSi2 Layers in SiGe Alloys

Published online by Cambridge University Press:  25 February 2011

R. Jebasinski ,
S. Mantl ,
Chr. Dieker ,
H. Dederichs ,
L. Vescan  and
R. Butz
R. Jebasinski
Affiliation:
Institut für Schicht-und Ionentechnik, Forschungszentrum JUlich, 5170 JUlich, Germany
S. Mantl
Affiliation:
Institut für Schicht-und Ionentechnik, Forschungszentrum JUlich, 5170 JUlich, Germany
Chr. Dieker
Affiliation:
Institut für Schicht-und Ionentechnik, Forschungszentrum JUlich, 5170 JUlich, Germany
H. Dederichs
Affiliation:
Institut für Schicht-und Ionentechnik, Forschungszentrum JUlich, 5170 JUlich, Germany
L. Vescan
Affiliation:
Institut für Schicht-und Ionentechnik, Forschungszentrum JUlich, 5170 JUlich, Germany
R. Butz
Affiliation:
Institut für Schicht-und Ionentechnik, Forschungszentrum JUlich, 5170 JUlich, Germany
Get access

Abstract

Synthesis of buried, epitaxial CoSi2 layers in Si1−xGex alloys (x =0.48 and x = 0.09) by 100 and 150 keV Co+ ion implantation and subsequent rapid thermal annealing was studied by X-Ray diffraction, Rutherford backscattering spectroscopy, He ion channeling, Auger Eectron Spectroscopy and Transmission Electron Microscopy. Buried single-crystal CoSi2 layers in the Si0.91Ge0.09 alloy containing ≈ 1 at% Ge were formed. The suicide formation causes an outdiffusion of Ge leading to an increase in the Ge concentration of the adjacent SiGe layers. In contrast, in the Si0.52Ge0.48 alloy no buried suicide layers could be produced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 279: Symposium A – Beam-Solid Interactions–Fundamentals and Applications , 1992 , 875
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] White, A. E., Short, K. T., Dynes, R. C., Gamo, J. P. and Gibson, J. M., Appl. Phys. Lett. 50, 95 (1987)Google Scholar
[2] Mantl, S., Mater. Sci. Rep. 8, 1 (1992)Google Scholar
[3] McGill, T. C., Miles, R. H., Hauenstein, R. J. and March, O. J. in Proc. of the Second International Symposium on Si Molecular Beam Epitaxy, eds.: Bean, J. C. and Schowalter, L. J. (Electrochemical Society, Pennington, NJ, 1988),Google Scholar
[4] Lauwers, A., Maex, K., Vandervorst, W., Brijs, G., Poortmans, J., Caymax, M., Vanhellemont, J. and Petersson, S., MRS Fall Meeting 1991, Boston, in pressGoogle Scholar
[5] Doolittle, L. R., Nucl. Inst. Meth. Phys. Res. B5, 344 (1985)Google Scholar
[6] Radermacher, K., Mantl, S., Kohlhof, K. and Jäger, W., J. Appl. Phys. 68, 3001 (1990)Google Scholar
[7] Dekempeneer, E. H. A., Ottenheim, J. J. M., Vandenhoudt, D. E. W., Bulle-Lieuwma, C. W. T. and Lathouwers, E. G. C., Nucl. Inst. Meth. Phys. Res. B55, 769 (1991)Google Scholar
[8] Jebasinski, R., Mantl, S., Dieker, Chr., Crecelius, G., Dederichs, H. and Vescan, L. Appl. Phys. Lett. 61 (20), in pressGoogle Scholar
[9] Wald, F. and Michalik, S. J., J. Less-Common Metals, 24, 277 (1971)Google Scholar
[10] Morehead, F. E., J. R., and Crowder, B. L. in “Ion Implantation” (C. Gordon and Breach Science Publishers), eds. Eisen, F. H. and Chadderton, L. T., 25 Google Scholar