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Ion Beam Synthesis of Ge Nanocrystals Embedded in SiO2 Matrix

Published online by Cambridge University Press:  31 January 2011

Srinivasa Rao N ,
Anand Pathak ,
Kabiraj D ,
S A Khan ,
B K Panigrahi ,
K G M Nair  and
D K Avasthi
Srinivasa Rao N
Affiliation:
srinivasarose@yahoo.co.in, School of Physics, University of Hyderabad, Hyderabad, A P, India
Anand Pathak
Affiliation:
appsp@uohyd.ernet.in, University of Hyderabad, Physics, School of Physics, University of Hyderabad, Hyderabad, A P, 500046, India, +91 40 23010181 / 23134316, +91 40 23010181 / 23010227
Kabiraj D
Affiliation:
kabiraj@iuac.ernet.in, Inter University Accelerator Centre, New Delhi, Delhi, India
S A Khan
Affiliation:
saif@iuac.ernet.in, Inter University Accelerator Centre, New Delhi, Delhi, India
B K Panigrahi
Affiliation:
bkp@igcar.gov.in, Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, T N, India
K G M Nair
Affiliation:
kgmn@igcar.gov.in, Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam, T N, India
D K Avasthi
Affiliation:
dka@iuac.ernet.in, Inter University Accelerator Centre, New Delhi, Delhi, India
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Abstract

High fluences of low energy Ge+ ions were implanted into Si matrix. We have also deposited Ge and SiO2 composite films by using the Atom beam sputtering (ABS). The as implanted/as-deposited films were irradiated by Swift Heavy Ions (SHI) with various energies and fluences. These pristine and irradiated samples were subsequently characterized by XRD and Raman to understand the crystallization behavior. Raman studies of the films indicate the formation of Ge crystallites as a result of SHI irradiation. Glancing angle X-ray diffraction results also confirm the presence of Ge crystallites in the irradiated samples. Moreover, the crystalline nature of Ge improves with an increase in fluence. Rutherford back scattering was used to quantify the concentration of Ge in SiO2 matrix and the film thickness. These detailed results have been discussed and compared with the ones available in literature. The basic mechanism for crystallization induced by SHI in these films will be presented.

Keywords

x-ray diffraction (XRD)Raman spectroscopyion-implantation
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1181: Symposium DD – Ion Beams and Nano-Engineering , 2009 , 1181-DD11-03
Copyright
Copyright © Materials Research Society 2009

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References

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