Hostname: page-component-6bf8c574d5-rwnhh Total loading time: 0 Render date: 2025-02-22T23:35:21.313Z Has data issue: false hasContentIssue false
  • English
  • Français

Ion Beam Synthesis of Luminescent Si and Ge Nanocrystals in aSilicon Dioxide Matrix

Published online by Cambridge University Press:  15 February 2011

H. A. Atwater ,
K. V. Shcheglov ,
S. S. Wong ,
K. J. Vahala ,
R. C. Flagan ,
M. L. Brongersma  and
A. Polman
H. A. Atwater
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125.
K. V. Shcheglov
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125.
S. S. Wong
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125.
K. J. Vahala
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125.
R. C. Flagan
Affiliation:
Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, CA 91125.
M. L. Brongersma
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, Netherlands.
A. Polman
Affiliation:
FOM Institute for Atomic and Molecular Physics, Kruislaan 407, 1098 SJ Amsterdam, Netherlands.
Get access

Abstract

Ion beam synthesis of Si and Ge nanocrystals in an SiO2 Matrix isperformed by precipitation from supersaturated solid solutions created byion implantation. Films of SiO2 on (100) Si substrates areimplanted with Si and Ge at doses 1 × 1016/cm2 - 5 × 1016/cm2. IMplanted samples are subsequentlyannealed to induce precipitation of Si and Ge nanocrystals. Ramanspectroscopy and high-resolution transmission electron microscopy indicate acorrelation between visible room-temperature photoluminescence and theformation of diamond cubic nanocrystals approximately 2–5 nm in diameter inannealed samples. As-implanted but unannealed samples do not exhibitluminescence. Rutherford backscattering spectra indicate a steepening ofimplanted Ge profiles upon annealing. Photoluminescence spectra arecorrelated with annealing temperatures, and compared with theoreticalpredictions for various possible luminescence Mechanisms, such as radiativerecombination of quantum-confined excitons, as well as possible localizedstate luminescence related to structural defects in SiO2Potential optoelectronic device applications are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 363
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Canham, L.T., Appl. Phys. Lett., 57 1046 (1990).Google Scholar
[2] Delley, B. and Steigmeier, E.F., Phys. Rev., B 47, 1397 (1993).Google Scholar
[3] Takagahara, T. and Takeda, K., Phys. Rev., B 46, 15578 (1992).Google Scholar
[4] Kimura, H., Imanaga, S., Hayafuji, Y. and Adachi, H., J. Phys. Soc. Jpn., 62, 2663 (1993).Google Scholar
[5] Matsumoto, N., Takeda, K., Teramae, H. and Fujino, M., Advances in Chemistry, 224, ACS Books, (1989), p. 515.Google Scholar
[6] Dimaria, D.J., Kirtley, J.R., Pakulis, E.J., Dong, D.W., Kuan, T.S., Pesavento, F.L., Theis, T.N., Cutro, J.A., and Brorson, S.D., J. Appl. Phys. 56, 401 (1984).Google Scholar
[7] Maeda, Y., Tsukamoto, N., Yazawa, Y., Kanemitsu, Y., and Masumoto, Y., Appl. Phys. Lett. 59, 3168 (1991).Google Scholar
[8] Kanemitsu, Y., Uto, H., Masumoto, Y. and Maeda, Y., Appl. Phys. Lett. 61 2187 (1992).Google Scholar
[9] Hayashi, S., Kanzawa, Y., Kataoka, M., Nagareda, T. and Yamamoto, K., Z. Phys. D 26, 144 (1993).Google Scholar
[10] Hayashi, S., Fijii, M., Yamamoto, K., Jpn. J. Appl. Phys. 28, 1464 (1989)Google Scholar
[11] Hayashi, S., Nagareda, T., Kanzawa, Y., and Yamamoto, K., Jpn. J. Appl. Phys. 32, 3840 (1993).Google Scholar
[12] Yoffe, A.D., Advances in Physics, 42, 173 (1993).Google Scholar
[13] Shimizu-Iwayama, T., Ohshima, M., Niimi, T., Nakao, S., Saitoh, K., Fujita, T., and Itoh, N., J. Phys. Cond. Matter 5, L375 (1993).Google Scholar
[14] Ziegler, J.F., Biersack, J.P. and Littmark, U., The Stopping and Range of Ions in Solids, Pergamon, New York, 1985.Google Scholar
[15] Shcheglov, K.V., Wong, S.S., Vahala, K.J., Flagan, R.C., to be published in Appl. Phys. Lett., 1994.Google Scholar
[16] Song, K.S. and Williams, R.T., Self-Trapped Excitons, Springer Verlag, New York, 1993, Ch. 7, pp. 270–299.Google Scholar
[17] Venkatasubramanian, R., Malta, D.P., Timmons, M.L. and Hutchby, J.A., Appl. Phys. Lett., 59, 1603 (1993).Google Scholar
[18] Kanemitsu, , Suzuki, K., Uto, H., Masumoto, Y., Matsumoto, T., Kyushin, S., Higuchi, K., and Matsumoto, H.., Appl. Phys. Lett., 61 2446 (1992);Google Scholar
Kanemitsu, Y., Suzuki, K., Uto, H., Masumoto, Y., Higuchi, K., Kyushin, S. and Matsumoto, H., Jpn. J. Appl. Phys. 32, 408 (1993).Google Scholar