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Ion Beam Techniques for Low K Materials Characterization

Published online by Cambridge University Press:  10 February 2011

H. Bakhru ,
A. Kumar ,
T. Kaplan ,
M. Delarosa ,
J. Fortin ,
G.-R. Yang ,
T.-M. Lu ,
S. Kim ,
C. Steinbruchel  and
X. Tang
...Show all authors
H. Bakhru
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 12222
A. Kumar
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 12222
T. Kaplan
Affiliation:
Department of Physics, State University of New York at Albany, Albany, NY 12222
M. Delarosa
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
J. Fortin
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
G.-R. Yang
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
T.-M. Lu
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
S. Kim
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
C. Steinbruchel
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
X. Tang
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
J. A. Moore
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
B. Wang
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
J. McDonald
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
S. Nitta
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
V. Pisupatti
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
A. Jain
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
P. Wayner
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
J. Plawsky
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
W. Gill
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselear Polytechnic Institute, Troy, NY12180
C. Jin
Affiliation:
Semiconductor Process and Device Center, Texas Instruments Inc., Dallas, TX 75265
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Abstract

Ion beam analysis techniques have become very useful for characterization of low k materials. Studies on several ion beam analysis techniques will be discussed. Rutherford Backscattering Spectrometry (RBS) provides a very powerful analytical technique for the thickness and porosity measurements on porous Si0 2 films. Nuclear Reaction Analysis (NRA) techniques for hydrogen and fluorine profiling are very useful to characterize fluorinated polymer and fluorinated oxide films. Examples of low k materials including Si02:F, Parylene-AF and Teflon-AF will be discussed. Fluorine diffusion in to metals and various interface effects between metal and low k materials will be presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 125
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

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