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Ion Implantation and Characterization of III-V Materials

Published online by Cambridge University Press:  26 February 2011

R. G. Wilson  and
D. B. Rensch
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
D. B. Rensch
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
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Abstract

We have implanted most dopant elements into GaAs, GaP, InP, and InSb, to energies from 10 to 700 keV, and a few up to 2.4 MeV, in random and channeled orientation, annealed some of these implants, and measured the depth distributions using secondary ion mass spectrometry (SIMS) . We have calculated values of Rm, Rp, ΔRp, γ1, β2, using an LSS formulation, and measured these same profile parameters for the experimental profiles using a Pearson IV computer fitting routine. We describe a study of the fabrication of self-aligned W-gate FETs in GaAs using Si-implanted channels and source/drains, and a buried p implant (Be or Mg) to compensate the backside (tail) of the Si profile. The implant profiles and electrical device characteristics, including the effects on AVt of various implant conditions, are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 343
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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