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Ion Induced Mixing of AlGaAs/GaAs Superlattices

Published online by Cambridge University Press:  25 February 2011

T. Venkatesan ,
S. A. Schwarz ,
P. Mei  and
H. W. Yoon
T. Venkatesan
Affiliation:
Bell Communications Research, Red Bank, NJ 07701-7020
S. A. Schwarz
Affiliation:
Bell Communications Research, Red Bank, NJ 07701-7020
P. Mei
Affiliation:
Physics Department, Rutgers University, Piscataway, NJ 08854
H. W. Yoon
Affiliation:
Bell Communications Research, Red Bank, NJ 07701-7020
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Abstract

Subsequent to the implantation of certain ions, the thermal stability of AlGaAs/GaAs superlattices can be reduced, enabling mixing of the layers at temperatures where they would otherwise be stable. The mixed layers have intermediate alloy composition and are of good crystalline quality. As a result this process is of great value in device fabrication where a high degree of vertical and lateral bandgap control is desirable. This paper reviews our work in understanding the mechanism of diffusion, its dependence on varilous process parameters, and potential applications in device fabrication.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 93: Symposium C – Materials Modification and Growth Using Ion Beams , 1987 , 171
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

[1] Technical Digest, International Electron Devices Meeting, Los Angeles, CA, 1986.Google Scholar
[2] Casey, H. C. Jr., and Panish, M. B., Heterostructure Lasers (Parts A & B), Academic Press, New York, 1978.Google Scholar
[3] Smith, J. S., Derry, P. L., Margalit, S. and Yariv, A., Appl. Phys. Lett., 47, 712 (1985).Google Scholar
[4] Kapon, E., Tamargo, M. C. and Hwang, D. M., Phys. Lett. 50, 347 (1987); D. M. Hwang, E. Kapon, M. C. Tamargo and R. Bhat, MRS Soc. Proc. 1986, Pittsburgh, PA.Google Scholar
[5] Laidig, W. D., Holonyak, N. Jr., Camras, M. D., Hess, K., Coleman, J. J., Dapkus, P. D., and Bardeen, J., Appl. Phys. Lett. 38, 776 (1981); W. D. Laidig, J. W. Lee, P. K. Chiung, L. W. Simpson, and S. M. Belair, J. Appl. Phys. 54, 6382 (1983); J. W. Lee and W. D. Laidig, J. Electron. Mater. 13, 147 (1984).Google Scholar
[6] Kawabe, M., Matsuara, N., Shimizu, N., Hasegawa, F. and Nannichi, Y., Jap. J. Appl. Phys. 23, L623 (1984).Google Scholar
[7] Coleman, J. J., Dapkus, P. D., Kirkpatrick, C. G., Camras, M. D. and Holonyak, N. Jr., Appl. Phys. Lett., 40, 904 (1982); P. Gavrilovic, D. G. Deppe, K. Meecham, N. Holonyak, Jr., J. J. Coleman and R. D. Burnham, Appl. Phys. Lett. 47, 130 (1985).Google Scholar
[8] Fukunaga, T., Ishida, K., Kuroda, T., Matsui, K., Narusawa, T., Morita, T., Miyauchi, E., Hashimoto, H. and Nakashima, H., Int. Symp. GaAs and Related Compounds, Karinzawa, Japan, 1985, Inst. Phys. Conf. Ser. No. 79, Chapter 8, p. 439.Google Scholar
[9] Chang, L. L. and Koma, A., Appl. Phys. Lett., 29, 138 (1976).Google Scholar
[10] Hirayama, Y., Horikoshi, Y. and Okamoto, H., Jap. J. Appl. Phys. 23, 1568 (1984); Y. Hirayama, Y. Suzuki, S. Tarucha and H. Okamoto, Jap. J. Appl. Phys. 24, L526 (1985); Y. Hirayama, Y. Suzuki and H. Okamoto, Jap. J. Appl. Phys. 25, 1498 (1985).Google Scholar
[11] Arakawa, Y., Smith, J. S., Yariv, A., Otsuka, N., Choi, C., Gu, B. P. and Venkatesan, T., Appl. Phys. Lett., 50, 92, (1987).Google Scholar
[12] Cibert, J., Petroff, P. M., Werder, D. J., Pearton, S. J., Gossard, A. C. and English, J. H., Appl. Phys. Lett., 49, 223 (1986).Google Scholar
[13] Schlesinger, T. E. and Kuech, T., Appl. Phys. Lett., 49, 519 (1986).Google Scholar
[14] Rao, E. V. K., Thibierge, H., Brillouet, F., Alexandre, F. and Azouby, R., Appl. Phys. Lett., 46, 867 (1985).Google Scholar
[15] Nakamura, T., Komiya, S., Inata, T., Muto, S., Hiyamiso, S. and Imebu, I., Proc. of Materials Research Soc. Meeting, Dec. 1986, Boston, ed. Published by MRS, Pittsburgh, USA.Google Scholar
[16] DeCooman, B. C., Carter, C. B., Ralston, T., Wicks, G. W. and Eastman, L. F., Proc. of Materials Research Soc. Meeting, Dec. 1986 Boston, ed. Published by MRS, Pittsburgh, USA.Google Scholar
[17] Dobisz, E. A., Tell, B., Craighead, H. G. and Tamargo, M. C., J. Appl. Phys. 60, 4150 (1986).Google Scholar
[18] Kirillov, D., Ho, P. and Davis, G. A., Appl. Phys. Lett., 48, 53 (1986).Google Scholar
[19] Venkatesan, T., Schwarz, S. A., Hwang, D. M., Bhat, R., Koza, M., Yoon, H., Mei, P., Arakawa, Y. and Yariv, A., Appl. Phys. Lett., 49, 701 (1986); S. A. Schwarz, T. Venkatesan, Y. Arakawa and P. Mei, 1985 MRS Symp. Layered Structures and Epitaxy (published by Materials Research Society, Pittsburgh, PA).Google Scholar
[20] Kavanagh, K. L., Mayer, J. W., Magee, C. W., Sheets, J., Tong, J. and Woodall, J. M., Appl. Phys. Lett., 47, 1208 (1985).Google Scholar
[21] Greiner, M. E. and Gibbons, J. F., J. Appl. Phys. 57, 578 (1985); M. E. Greiner and J. F. Gibbons, Appl. Phys. Lett., 44, 750 (1984).Google Scholar
[22] Bhattacharya, R. S., Rai, A. K., Yeo, Y. K., Pronko, P. P., Ling, S. C., Wilson, S. R., and Park, Y. S., J. Appl. Phys. 54, 2329 (1983).Google Scholar
[23] Guido, L. J., Holonyak, N. Jr., Hsieh, K. C., Kaliski, R. W., Baker, J. E., Deppe, D. G., Burnham, R. D., Thornton, R. L. and Paoli, T. L., J. Elec. Mat. 16, 87 (1987); L. J. Guido, K. C. Hsieh, N. Holonyak, Jr., R. W. Kaliski, V. Eu, M. Feng, and R. D. Burnham, J. Appl. Phys. 61, 1329 (1987).Google Scholar
[24] Schwarz, S. A., Venkatesan, T., Hwang, D. M., Yoon, H. W., Bhat, R. and Arakawa, Y., Appl. Phys. Lett., 50, 281 (1987).Google Scholar
[25] Dobisz, E. A., Tell, B., Graighead, H. G., Schwarz, S. A., Tamargo, M. C. and Harbison, J. P., 1986 MRS Symp. (To be published by Materials Research Society, Pittsburgh, PA);Google Scholar
[26] Mei, P., Yoon, H. W., Venkatesan, T., Schwarz, S. A. and Harbison, J. P., to be published.Google Scholar
[27] Goldstein, B., Phys. Rev. 121, 1305 (1960).Google Scholar
[28] Tan, T. Y. and Gö;sele, U., J. Appl. Phys. 61, 1841 (1987).Google Scholar
[29] Vechten, J. A. Van, J. Appl. Phys. 53, 7082 (1982); J. A. Van Vechten, Appl. Phys. Lett., 46, 849 (1985); J. A. Van Vechten, J. Vac. Sci. and Technol. B2, 569 (1984).Google Scholar
[30] Kawabe, M., Shimizu, N., Hasegawa, F., and Nannichi, Y., Appl. Phys. Lett., 46, 849 (1985); Y. limura, D. Yui and M. Kawabe, Extended abstracts of the 18th Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 623.Google Scholar
[31] Kobayashi, J., Nakajima, M., Fukunaga, T., Takamai, T., Ishida, K., Nakashima, H. and Ishida, K., Jap. J. Appl. Phys., 25, L736 (1986); H. Nakashima, J. Kobayashi, T. Fukunaga, K. Matsui, K. Ishida, M. Nakajima, Y. Bamba and K. Ishida, Superlattice and Microstructures 2, 303 (1986) Academic Press Inc. (London).Google Scholar
[32] Narusawa, T., Uchida, Y., Kobayashi, K. L. I., Ohta, T., Nakajima, N. and Nakashima, H., Inst. Phys. Conf. Ser. No. 74, Chapter 3, pp. 127, Adam Hilger Ltd. 1985.Google Scholar
[33] Kawabe, M., Ikeda, Y., Shimizu, N., Mannami, K. and Nannichi, Y., Extended abstracts of the 18th Conference on Solid State Devices and Materials, Tokyo, 1986, pp. 607.Google Scholar
[34] Guido, L. J., Holonyak, N. Jr., Hsieh, K. C., Kaliski, R. W., Plano, W. E., Burnham, R. D., Thornton, R. L., Epler, J. E., and Paoli, T. L., J. Appl. Phys. 61, 1372 (1987).Google Scholar
[35] Venkatesan, T., Schwarz, S. A., Hwang, D. M., Bhat, R., Yoon, H. W. and Arakawa, Y., Nucl. Instrum. and Meth. B19/20, 777 (1987).Google Scholar
[36] Kapon, E., Stoffel, N. G. and Dobiz, E., Program of the CLEO Conference, 1987 Baltimore, p. WQ.4.Google Scholar
[37] Julian, F., Swanson, P. D., Emanuel, M. A., Deppe, D. G., DeTemple, T. A., Coleman, J. J., and Holonyak, N. Jr., Appl. Phys. Lett., 50, 866 (1987).Google Scholar
[38] Deppe, D. G., Hsieh, K. C., Holonyak, N. Jr., Burnham, R. D., and Thornton, R. L., J. Appl. Phys., 58, 4515 (1985); R. L. Thornton, R. D. Burnham, T. L. Paoli, N. Holonyak, Jr., and D. G. Deppe, Appl. Phys. Lett., 48, 7 (1986).Google Scholar
[39] Tatsuta, S., Inada, T., Okamura, S., Muto, S., Hiyamizu, S. and Umebu, I., Materials Res. Soc. Proc. 37, 23 (1985), Published by Materials Research Society, Pittsburg, PA.Google Scholar
[40] Abrokwah, J. K., Hibbs-Brenner, M., Daniels, R. R. and Joslyn, P., Mat. Res. Proc. 37, 301 (1985), Published by MRS, Pittsburgh, PA.Google Scholar