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Ion-Beam-Driven Amortization of Ca2La8 (SiO4)6O2 SingleCrystals

Published online by Cambridge University Press:  15 February 2011

W. J. Weber ,
N. J. Hess  and
L. M. Wang
W. J. Weber
Affiliation:
Pacific Northwest Laboratory, P.O. Box 999, Richland, WA 99352, USA
N. J. Hess
Affiliation:
Pacific Northwest Laboratory, P.O. Box 999, Richland, WA 99352, USA
L. M. Wang
Affiliation:
Department of Earth and Planetary Sciences, University of New Mexico, Albuquerque, NM 87131, USA
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Abstract

Single crystals of Ca2La8(SiO4)6O2,with 1% Nd substituted for La, were irradiated with 0.8 MeV Ne+and 1.5 MeV Kr+ ions over the temperature range from 15 K to 773K. The irradiations were carried out using the HVEM-Tandem Facility atArgonne National Laboratory. The structural changes and the ion fluence forcomplete amorphization were determined by in situtransmission electron Microscopy. The ion fluence for complete amorphizationincreased with temperature in two stages associated with defect annealingprocesses. The critical temperature for amorphization increased from -360 Kfor 0.8 MeV Ne+ to -710 K for 1.5 MeV Kr+. During in situ annealing studies, irradiation-enhancedrecrystallization was observed at 923 K. Spatially-resolved fluorescencespectra of the Nd ion excited with 488.0 nm laser excitation showed markedline-broadening toward the center of the amorphous regions. InitialMeasurements indicate the subtle shifts of the 9I9/2groundstate energy levels can be measured by pumping directly into theexcited state 4F3/2 Manifold suggesting that the linebroadening observed originates from a distribution of geometricallydistorted Nd sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 435
Copyright
Copyright © Materials Research Society 1994

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References

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