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Junction Field Effect Transistor X-RAY Detectors

Published online by Cambridge University Press:  21 February 2011

J.C. Lund ,
F. Olschner  and
L. Rehn
J.C. Lund
Affiliation:
RMD, Inc. 44 Hunt St., Watertown, MA 02172
F. Olschner
Affiliation:
RMD, Inc. 44 Hunt St., Watertown, MA 02172
L. Rehn
Affiliation:
InterFET Scientific, 322 Gold St., Garland, TX 75042
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Abstract

We describe the theory of operation, design, and estimated performance of an n-channel JFET designed to be operated as a detector in an X-ray spectrometer system. We estimate that a room temperature (300 K) JFET detector can be built with performance comparable to a small area, cryogenically cooled Si(Li) detector.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 302: Symposium F – Semiconductors for Room-Temperature Radiation Detector Applications , 1993 , 549
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Lund, J.C. and Olschner, F., Junction Field Effect Transistors as Radiation Detectors, presented at the IEEE Nuclear Science Symposium, Orlando, FL, October 1992 (submitted for Publication in IEEE Trans. Nuc. Sci., 1993).Google Scholar
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