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Kinetics of Light-Induced Deffect Formation and Annealing in Hydrogenated Amorphous Silicon Alloyed with Sulfur

Published online by Cambridge University Press:  10 February 2011

Baojie Yan ,
Shenlin Chen  and
P. C. Taylor
Baojie Yan
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
Shenlin Chen
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
P. C. Taylor
Affiliation:
Department of Physics, University of Utah, Salt Lake City, UT 84112
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Abstract

The creation and annealing kinetics of light-induced defects in a-SiSx:H are studied by ESR and LESR measurements. The dispersion of defect creation after prolonged illumination with white light is greater for a-SiSx:H than that for undoped a-Si:H. In addition, the saturated value of the dark spin density is slightly lower for a-SiSx:H than that for a-Si:H. The annealing behavior can be fitted with a Gaussian distribution of annealing activation energies as is the case for undoped a-Si:H. The incorporation of sulfur decreases the peak energy and increases the width of the distribution of activation energies. Light-soaking does not change the low temperature LESR spectrum and LESR spin density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 453
Copyright
Copyright © Materials Research Society 1998

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References

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