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Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry

Published online by Cambridge University Press:  10 February 2011

R. Schwarz ,
A. Dittrich ,
S. M. Zhou ,
M. Hundhausen ,
L. Ley ,
L. Y. Chen ,
D. Woerle ,
C. Manke  and
M. Schulz
R. Schwarz
Affiliation:
Instituto Superior Técnico, Departamento de Física, P-1096 Lisboa, Portugal
A. Dittrich
Affiliation:
Universität Erlangen-Nürnberg, Institut für Technische Physik, D-91058 Erlangen, Germany
S. M. Zhou
Affiliation:
Universität Erlangen-Nürnberg, Institut für Technische Physik, D-91058 Erlangen, Germany
M. Hundhausen
Affiliation:
Universität Erlangen-Nürnberg, Institut für Technische Physik, D-91058 Erlangen, Germany
L. Ley
Affiliation:
Universität Erlangen-Nürnberg, Institut für Technische Physik, D-91058 Erlangen, Germany
L. Y. Chen
Affiliation:
Fudan University, Center for Applied Physics, Shanghai 200 433, China
D. Woerle
Affiliation:
Universität Erlangen-Nürnberg, Institut für Angewandte Physik, D-91058 Erlangen, Germany
C. Manke
Affiliation:
Universität Erlangen-Nürnberg, Institut für Angewandte Physik, D-91058 Erlangen, Germany
M. Schulz
Affiliation:
Universität Erlangen-Nürnberg, Institut für Angewandte Physik, D-91058 Erlangen, Germany
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Abstract

Suicide formation during thermal annealing of thin Pt layers deposited by evaporation onto crystalline silicon substrates was studied by in-situ spectral ellipsometry. As was shown in an earlier study, Pt suicide is formed in a two-step process with intermediate stages of Pt2Si and PtSi at temperatures of about 190 and 240 °C, respectively. We observed a shift of about 15 °C of the di- and monosilicide formation, when the anneal rate was lowered from 3 to 1 K/min. The analysis of the reaction kinetics using the normalized ellipsometric angle δ yields a good fit to the data for different anneal rates with an activation energy of (1.6 ± 0.2) eV. The underlying model of suicide formation through a multilayer system was checked with depth profiles and compositional information obtained from Rutherford Backscattering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 259
Copyright
Copyright © Materials Research Society 1997

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References

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