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Large-Area Growth of InGaN/AlGaN Using In Situ Monitoring

Published online by Cambridge University Press:  10 February 2011

E. Woelk ,
D. Schmitz ,
G. Strauch ,
B. Wachtendorf  and
H. Jorgensen
E. Woelk
Affiliation:
AIXTRON, Inc., 1569 Barclay BI., Buffalo Grove, IL 60089, U.S.A.
D. Schmitz
Affiliation:
AIXTRON GmbH, Kackertstr. 15-17, D-52072 Aachen, Germany
G. Strauch
Affiliation:
AIXTRON GmbH, Kackertstr. 15-17, D-52072 Aachen, Germany
B. Wachtendorf
Affiliation:
AIXTRON GmbH, Kackertstr. 15-17, D-52072 Aachen, Germany
H. Jorgensen
Affiliation:
AIXTRON GmbH, Kackertstr. 15-17, D-52072 Aachen, Germany
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Abstract

A newly developed Metalorganic Chemical Vapor Deposition (MOCVD) reactor for processing batches of seven 50mm wafers per run at deposition temperatures up to 1600°C is introduced. The substrates are individually rotated by means of gas bearings utilizing high purity gas for operation. In order to achieve the maximum uniformity on a wafer the uniformity of the growth temperature was maximized. Pyrometric measurements revealed a temperature uniformity across the susceptor of ±4°C at a temperature of 1300°C. Growth of GaN and GaInN produced uniform layers regarding composition and thickness. On a 50mm diameter wafer the standard deviation for the thickness of a GaN layer is 6% and the standard deviation for the composition of a GaInN layer as determined by photoluminescence is 2%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 265
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

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