Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-02-05T21:21:33.228Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Ablation of CuInSe2 and CuIn/GaSe2 Alloys for Solar Cell Applications

Published online by Cambridge University Press:  01 January 1992

Arthur E. hill ,
Seppo Leppåvuori ,
Robert D. Tomlinson ,
Richard D. Pilkington ,
Juhani Levoska ,
Ejaz Ahmed  and
Johannes Frantt
Arthur E. hill
Affiliation:
University of Salford, Dept. of Electronic and Electrical Engineering, Salford M5 4WT, UK
Seppo Leppåvuori
Affiliation:
University of Oulu, Microelectronics and Matl. Phys. Laboratories, 90570 Oulu, Finland
Robert D. Tomlinson
Affiliation:
University of Salford, Dept. of Electronic and Electrical Engineering, Salford M5 4WT, UK
Richard D. Pilkington
Affiliation:
University of Salford, Dept. of Electronic and Electrical Engineering, Salford M5 4WT, UK
Juhani Levoska
Affiliation:
University of Oulu, Microelectronics and Matl. Phys. Laboratories, 90570 Oulu, Finland
Ejaz Ahmed
Affiliation:
University of Salford, Dept. of Electronic and Electrical Engineering, Salford M5 4WT, UK
Johannes Frantt
Affiliation:
University of Oulu, Microelectronics and Matl. Phys. Laboratories, 90570 Oulu, Finland
Get access

Abstract

Copper indium diselenide (CIS) is one of the most promising materials proposed for use in the next generation of solar cells. A successful technique to deposit thin films of this material, which would maximise the advantage offered by its exceptionally high absorption coefficient and radiation resistance, has proved to be elusive. Dissociation of the source material during the physical deposition of these thin films has forced commercial production to adopt a binary (Cu/In) deposition route with a subsequent selenisation stage. This has proved to be a major difficulty; selenisation has introduced its own problems of non-uniformity and toxicity. Laser ablation is especially suited to the deposition of multi-component films in that the initial composition is conserved.

Single crystal and polycrystalline targets of CIS were laser ablated using an XeCl excimer laser. The films were analysed using EDAX, XRD, RBS and Raman spectroscopy. Results from EDAX and RBS measurements indicated that the composition of the source material had largely been maintained in the films. This suggests that laser ablation could prove to be a significant technique in the preparation of complex ternary semiconductor thin films for solar cell applications which would allow the full potential of these materials to be realised in device production.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 483
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Rockett, A. and Birkmire, R.W., J. Appl. Phys. 70(7), R81 (1991)Google Scholar
2. Landis, G.A. and Hepp, A.F., Proc. “Thin film photovoltaics status and applications to space power”. European Space Power Conf. Florence, 517 (1991).Google Scholar
3. Strelchenko, S.S., Bondor, S.A., Molodyk, A.D., Berger, L.I. and Balanevskaya, A.E., lzv. Akad. Nauk. SSSR, Neorg. Mater. 5, 593 (1969)Google Scholar
4. Parkles, J., Tomlinson, R.D. and Hampshire, M.J., J. Appl. Cryst, 6, 414 (1973)Google Scholar
5. Ciszek, E., Proc. 19th IEEE Photovoltaics Specialists Meeting, 1448 (1987)Google Scholar
6. Gonzales, J., Quintero, M., Rincon, C., Phys. Rev. B, 45, 7022 (1992)Google Scholar
7. Tanino, H., Maeda, T., Fujikake, H., Makanishi, H., Endo, J., Irie, T., Phys. Rev. B, 45, 13323 (1992)Google Scholar
8. Gan, J.N., Tauc, J., Lambrecht, V.G. Jr., Robbins, M., Phys. Rev. B, 13, 3610 (1976)Google Scholar
9. Yamanaka, S., Konagai, M., Thkahashi, , Jpn. J. Appl. Phys, 28, L1337 (1989)Google Scholar
10. Yamanaka, S., Tanda, M., Nakada, N., Yamada, A., Konaga, N., Takahashi, , Jpn. J. Appl. Phys, 30, 442, (1991)Google Scholar
11. Neumann, H., Tomlinson, R.D., Kissinger, W., Avgerinos, N., Phys. Status Solidi B, 118, K51 (1983)Google Scholar