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Laser Induced Epitaxial CoSi2 Formation

Published online by Cambridge University Press:  03 September 2012

C.M. Comrie  and
V. Hoffman
C.M. Comrie
Affiliation:
Department of Physics, University of Cape Town, Rondebosch 7700, South Africa
V. Hoffman
Affiliation:
Department of Physics, University of Cape Town, Rondebosch 7700, South Africa
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Abstract

While it is possible to grow epitaxial CoSi2 films of a high quality using UHV technology it is much more difficult to produce films of similar quality under high vacuum and non-“clean room” conditions. Tung et al.1 have however shown that films of a good quality can be produced under these poorer conditions with the aid of a laser anneal of an appropriate power followed by a short thermal anneal. In this paper the role of the laser anneal, and of the (post laser) thermal anneal, in the production of epitaxial films is examined. It appears that the principle role of the laser anneal is to induce the epitaxial CoSi2 formation at the silicon / silicide interface, and that this epitaxial layer then acts as a seed for epitaxial film growth during the subsequent thermal anneal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 421
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

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