Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-28T10:12:42.442Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Interference Structuring of a-Si:H

Published online by Cambridge University Press:  10 February 2011

C. E. Nebel
C. E. Nebel*
Affiliation:
Walter Schottky Institut, Technische Universität Müchen, 85748 Garching, Germany, CNebel@physik.tu-muenchen.de
Get access

Abstract

Laser interference structuring with a pulsed Nd:YAG laser set-up is introduced and typical geometric dimensions and limitations are discussed. Intensity modulated laser beams are used to recrystallize amorphous silicon layers periodically at the intensity maxima. Stripe or tip structures of multi-crystalline (mc) silicon with sub-micrometer dimensions are shown. Structural, electronic and optical properties of the mc-Si structures are discussed. A hybrid thin film p-i-n solar cell architecture is described where the textured TCO is replaced by a flat TCO and a laterally structured boron doped mc-Si window layer. Light trapping, light diffraction and higher internal electric fields are proposed to be the main advantages of such a solar cell.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 117
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Casey, H.C. Jr,, in “Atomic Diffusion in Semiconductors”, edited by Shaw, D. (Plenum Press, New York, 1973), p. 351.Google Scholar
2. Brunner, K., Bockelmann, U., Abstreiter, G., Walther, M., Böhm, G., Tränkle, G., Phys. Rev. Lett. 69, 3216 (1992).Google Scholar
3. Baumgartner, P., Brunner, K., Abstreiter, G., Böhm, G., Tränkle, G., Weimann, G., Appl. Phys. Lett. 64, 592 (1994).Google Scholar
4. Beinstingl, W., Li, Y.J., Weman, H., Merz, J., Petroff, P.M., J. Vac. Sci. Technol. B9, 3479 (1991).Google Scholar
5. Li, Y.J., Tsuchiya, M., Petroff, P.M., Appl. Phys. Lett. 57, 472 (1990).Google Scholar
6. Biegelsen, D.K., Johnson, N.M., Bartelink, D.J., Moyer, M.D., Appl. Phys. Lett. 38, 150 (1981).Google Scholar
7. Johnson, N.M., Biegelsen, D.K.,. Moyer, M.D., in “Proceedings of the Materials Research Society Annual Meeting on Laser- and Electron-Beam Solid Interactions and Material Processing”, edited by Gibbons, J.F., Hess, L.D., Sigmon, T.W., 1980 Boston, (Elsevier North Holland, 1981), p. 463.Google Scholar
8. Portnoi, E.L., Koval'chuk, Yu. V., Ostrovskaya, G.V., Piskarska, A.S., Skopina, V.I., Smil'gyavichyus, V.I., Smirnitskii, V.B., Sov. Tech. Phys. Lett. 8, 201 (1982).Google Scholar
9. Koval'chuk, Yu.V., Portnoi, E.L., Skopina, V.I., Smirnitskii, V.B., Smol'ski, O.V., Sokolov, I.A., Sov. Tech. Phys. Lett. 9, 365 (1983).Google Scholar
10. Heintze, M., Santos, P.V., Nebel, C.E., Stutzmann, M., Appl. Phys. Lett. 64, 3148 (1994).Google Scholar
11. Stutzmann, M., Nebel, C.E., Groos, G., Zimer, J., Dahlheimer, B., Kelly, M., Laser 95, in press,Google Scholar
12. Nebel, C.E., Dahlheimer, B., Schoniger, S., Stutzmann, M., phys. stat. sol. (b) 194, 55 (1996).Google Scholar
13. Heintze, M., Zedlitz, R., Progress in Photovoltaics, 1, p. 213 (1993).Google Scholar
14. Schöniger, S., Dahlheimer, B., Nebel, C.E., Stutzmann, M., to be published.Google Scholar
15. Heintze, M., Westlake, W., Santos, P.V., Nebel, C.E., Stutzmann, M., Proc. of the 12th Photovoltaic Solar Energy Conference, Amsterdam 1994.Google Scholar
16. Veprek, S., Sarott, F.-A., Rückschloß, M., J. of Non-Cryst. Sol. 137&138, p. 733 (1991).Google Scholar
17. Wood, R.F., Jellison, G.E. Jr,, in “Pulsed Laser Processing of Semiconductors” Semiconductors and Semimetals, Vol.23, edited by Wood, R.F., White, C.W., Young, R.T. (Academic Press, 1984), p. 165.Google Scholar
18. Tsuda, S., Takahama, T., Hishikawa, Y., Tarai, H., Nishiwaki, H., Wakisaka, K., Nakano, S., J.- Non-Cryst. Sol. 164–166, p. 679 (1993).Google Scholar
19. Tarui, H., Kishi, Y., Nakamura, N., Nishikumi, M., Tanaka, M., Haku, H., Takahama, T., Tsuda, S., Solar Energy Materials 23, 227 (1991).Google Scholar