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Laser Recrystallized SOM for Strain Gauge Applications

Published online by Cambridge University Press:  28 February 2011

Xing Kunshan ,
Xu Xuemin ,
Lin Chenglu ,
Tan Songsheng  and
Tsou Shihchang
Xing Kunshan
Affiliation:
Ion Beam Laboratory Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Xu Xuemin
Affiliation:
Ion Beam Laboratory Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Lin Chenglu
Affiliation:
Ion Beam Laboratory Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Tan Songsheng
Affiliation:
Ion Beam Laboratory Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
Tsou Shihchang
Affiliation:
Ion Beam Laboratory Shanghai Institute of Metallurgy, Academia Sinica Shanghai 200050, China
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Abstract

A novel material SOM (Silicon on Metal) was obtained by laser recrystallization. 0.5miti amorphous-Si film was deposited by glow discharge on a metal substrate covered with lym CVD Si02 Boron ions were implanted in a-Si at an energy of 60KeV and a dose of 5xl015cm-2. A CW argon laser was used to recrystal-lize a-Si film. After CW argon laser irradiation, a-Si was recrystallized and the grain size was increased to 10x40ym, the concentration profile of impurities became uniform and the electrical properties of SOM were improved significantly, sheet resistance lower than 60Ω/⃞n was obtained. The gauge factor of recrystallized SOM materials measured by a cantilever transducer was higher than 30. The devices made of this material have pressure sensitivity of 6mV/V for pressure range 1 bar.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 421
Copyright
Copyright © Materials Research Society 1988

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References

1 Seto, J.Y.W., J. Appl. Phys. 47, 4780 (1976).CrossRefGoogle Scholar
2 Onuma, Y. and Sekiya, K., Jpn. J. Appl. Phys. 11, 20 (1972).CrossRefGoogle Scholar
3 Luder, Ernst, Sensors and Actuators, 10, 9 (1986).CrossRefGoogle Scholar
4 French, P.J. and Evans, A.G.R., J. Phys. E., Sci. Instrum. 19, 1055 (1986).CrossRefGoogle Scholar
5 Binder, J., Henning, W., Obermeier, E., Schaber, H., and Cutter, D., Sensors and Actuators, 4, 527 (1983).CrossRefGoogle Scholar
6 Schaber, H., Cutter, D., Binder, J. and Obermeier, E., J. Appl. Phys. 54 (8), 4533 (1983).CrossRefGoogle Scholar
7 Erskine, J.C., IEEE. Trans. Electron Devices, ED-30 (7), 796 (1983).CrossRefGoogle Scholar
8 Gemer, W. and Todt, W., Sensors and Actuators, 4, 183 (1983).CrossRefGoogle Scholar
9 Kanda, Y., IEEE. Trans. Electron Devices, ED-29, 64 (1982).CrossRefGoogle Scholar
10 Mason, W.P. and Thurston, R.N., J. Acoust. Sci. Amer. 27, 1097 (1957).Google Scholar