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Laser-Assisted Low Temperature Processing of PZT Thin Films

Published online by Cambridge University Press:  10 February 2011

Yongfei Zhu ,
Jinsong Zhu ,
Y. J. Song  and
S. B. Desu
Yongfei Zhu
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, VA 24061-0237
Jinsong Zhu
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, VA 24061-0237
Y. J. Song
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, VA 24061-0237
S. B. Desu
Affiliation:
Department of Materials Science and Engineering, Virginia Tech, VA 24061-0237
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Abstract

A novel method for lowering processing temperature of ferroelectric Pb(Zr1−xTix)O3 (PZT) thin films was developed utilizing a laser-assisted two-step process. In the first step, perovskite phase was initiated in the PZT films by subjecting the films to a fornace anneal at low temperatures in the range of 470 °C to 550 °C depending on the Zr/Ti ratio. Later, the films were laser-annealed (using krF excimer laser) at room temperature to grow the perovskite phase, and to improve microstructure and ferroelectric properties. It was found that this two-step process was very effective in producing excellent quality ferroelectric PZT films at low temperatures. It should be noted that although laser annealing of amorphous and/or pyrochlore films directly (one-step process) produces perovskite phase, the ferroelectric properties of these films, irrespective of the composition, were rather unattractive. Some possible reasons for the ineffectiveness of the one-step process were discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 493: Symposium U – Ferroelectric Thin Film VI , 1997 , 305
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1. Scott, J. F. and Paz de Araujo, C. A., Science 246, 1400 (1989).Google Scholar
2. Okuyama, M. and Hamakawa, Y., Ferroelectrics 63, 243 (1985).Google Scholar
3. Mansingh, A., Ferroelectrics 102, 69 (1990).Google Scholar
4. Gat, A., Gerzberg, L., Gibbons, J.F., Magee, T.J., Peng, J, and Hong, J.D., Appl. Phys. Lett. 33, 775 (1978).Google Scholar
5. Watanabe, H., Miki, H., Sugai, S., Kawasaki, K., and Kioka, T., Jpn. J. Appl. Phys. 33, 4491 (1994).Google Scholar
6. Lu, X.M., Zhu, J. S., Huang, X.F., Lin, C.Y., and Wang, Y.N., Appl. Phys. Lett. 65, 2015 (1994).Google Scholar
7. Lu, X.M., Zhu, J.S., Hu, W.S., Liu, Z.G., and Wang, Y.N., Appl. Phys. Lett. 66, 2481 (1995).Google Scholar
8. Xiong, S.B., Ye, Z.M., Liu, J.M., Li, A.D., Lin, C.Y., Chen, X.Y., Guo, X.L., and Liu, Z.G., Appl. Surf. Sci. 109/110, 124 (1997).Google Scholar
9. to be published.Google Scholar
10. Linchtenwalner, D.J., Auciello, O., Dat, R., and Kingon, A.I., J. Appl. Phys. 74 (12), 7497 (1993).Google Scholar
11. Kwok, C.K. and Desu, S.B., J. Mater. Res. 9, 1728 (1994).Google Scholar