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Laser-Induced Surface Defects

Published online by Cambridge University Press:  15 February 2011

Jean-Marie Moison  and
Marcel Bensoussan
Jean-Marie Moison
Affiliation:
Centre National d'Etudes des Télécommunications, Département OMT *, 196 rue de Paris 92220 Bagneux - France
Marcel Bensoussan
Affiliation:
Centre National d'Etudes des Télécommunications, Département OMT *, 196 rue de Paris 92220 Bagneux - France
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Abstract

The influence of pulsed laser processing (PLP) on the structure and composition of Si, GaAs, Inp and au surfaces has been investigated as a function of the laser fluence. Above a threshold fluence, all initial structures turn into a (1×1) structure and the V-element content of the compound surfaces is decreased. The structure change is shown to be related to the existence of a number of atomic steps on the Plp surface (up to 10114 /cm2 equivalent broken bonds). These defects can be eliminated by further annealings. On the other hand, the stoechiometry defects, which are less numerous (1012−1013/cm2) cannot be eliminated. A model for the mechanisms of defect creation and annihilation during PLP is outlined. The incidence of PLP-induced defects on device technology is evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 329
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

Laboratoire associé au C.N.R.S. L.A. 250

References

REFERENCES

|1|Zehner, D.M., White, C.W. and Ownby, G., Appl. Phys. Lett. 36, 56 (1980)Google Scholar
1aCowan, P.L. and Golovchenko, J.A., J. Vac. Sci. Technol. 17, 1197 (1980)Google Scholar
|2|Moison, J.M. and Bensoussan, M., J. Vac. Sci. Technol. 21, 315 (1982)Google Scholar
|3|Chabal, Y.J., Rowe, J.E. and Zwemer, D.A., Phys. Rev. Left. 46, 600 (1980)Google Scholar
|4|Henzler, M., Surf. Sci. 19, 159 (1970)Google Scholar
|5|Zehner, D.M., White, C.W., Appleton, B.R. and Ownby, G.W., Proc. of the Mrs Annual Meeting - Boston 1981 (North-Holland 1982) p. 603Google Scholar
|6|Bedair, S.M. and Smith, H.P., J. Appl. Phys. 40, 4776 (1969)Google Scholar
|7|Zehner, D.M., Noonan, J.R., Davis, H.L. and White, C.W, J. Vac. Sci. Technol. 18, 852 (1981)Google Scholar
|8|Zehner, D.M., White, C.W., Heimann, P., Reihl, B., Himpsel, F.J. and Eastman, D.E.Phys. Rev. B24, 4875 (1981)Google Scholar
8aHimsel, F.J., 16th Int. Conf. on the Physics of Semiconductors, Montpellier 1982Google Scholar
8bTromp, R.M., Van Loenen, E.J., Iwani, M. and Saris, F.W., ibidem (11) and Solid State Comm., to be publishedGoogle Scholar
|9|Bennett, P.A. and Webb, M.W., Surf. Sci. 104, 74 (1981)Google Scholar
|10|Eastman, D.E., Himpsel, F.J. and Van der Veen, J.F., Solid State Comm. 35, 345 (1980)Google Scholar
|11|Hottier, F., Theeten, J.B., Masson, A. and Domange, J.L., Surf. Sci. 65, 563 (1977)Google Scholar
|12|Olshanetsky, B.Z. and Shklyaev, A.A., Surf. Sci. 82, 445 (1979)Google Scholar
12aChabal, Y.J., Rowe, J.E. and Christman, S.B., Phys Rev. B24, 3303 (1981)Google Scholar
12bMoison, J.M. and Domange, J.L., Surf. Sci. 67, 336 (1977)Google Scholar
|13|Cardillo, M.J., Phys. Rev. B23, 4279 (1981)Google Scholar
|14|Moison, J.M. and Bensoussan, M., surf.Sci. and Appl.Phys.Lett.,to be publishedGoogle Scholar